RK7002B

2.5V Drive Nch MOSFET RK7002B  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT  Application Switching  Packaging specifications Type RK7002B Package Code Basic ordering unit (pieces) Taping T116 3000   Inner circuit (3) ∗2 (2)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. ∗1 Limits 60 20 250 1 150 1 0.2 150 55 to +150 Unit V V mA A mA A W C C (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg (1) SOURCE (2) GATE (3) DRAIN  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 625 Unit C / W www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.06 - Rev.B RK7002B Electrical characteristics (Ta = 25C) Parameter Symbol Data Sheet Min. 60 1.0 0.25 - Typ. 1.7 2.1 2.3 3.0 15 4.5 2 3.5 5 18 28 Max. 10 1 2.3 2.4 3.0 3.2 12.0 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=250mA, VGS=10V ID=250mA, VGS=4.5V ID=250mA, VGS=4.0V ID=10mA, VGS=2.5V ID=250mA, VDS=10V VDS=25V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=10V RL 300 RG=10 Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed IGSS IDSS VGS (th) * RDS (on) Drain-source breakdown voltage V(BR)DSS  l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * S pF pF pF ns ns ns ns Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Forward voltage VSD * *Pulsed Max. 1.2 Unit V Conditions Is=250mA, VGS=0V www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.06 - Rev.B RK7002B Electrical characteristics curves 0.5 Data Sheet DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.4 0.3 0.2 VGS= 2.8V 0.1 VGS= 2.5V 0 0 0.2 0.4 0.6 0.8 1 VGS= 10V VGS= 4.5V VGS= 4.0V 0.4 0.3 DRAIN CURRENT : ID[A] Ta= 25C Pulsed 0.5 VGS= 10V VGS= 4.5V VGS= 4.0V Ta= 25C Pulsed 1 VDS= 10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 VGS= 2.8V 0.2 0.1 0 0 2 4 6 8 10 VGS= 2.5V 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( I ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( II ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ Ta= 25C Pulsed 10 VGS= 2.5V VGS= 4.0V VGS= 4.5V VGS= 10V STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ] 100 100 100 10 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= 4.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C 1 1 1 0.1 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( I ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( II ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( III ) 100 100 STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ 10 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 4.0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS= 2.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1 VDS= 10V Pulsed 0.1 1 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( IV ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( IV ) DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.06 - Rev.B RK7002B 1 8 1000 Data Sheet REVERSE DRAIN CURRENT : Is [A] SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(ON)[ Ta=25C Pulsed 6 ID= 0.01A 4 ID= 0.25A td(off) tf 100 Ta=25C VDD= 30V VGS=10V RG=10 Pulsed 0.1 0.01 Ta=125C Ta=75C Ta=25C Ta=-25C 10 2 td(on) tr 0.001 0 0.5 1 1.5 0 0 2.5 5 7.5 10 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics 1 SOURCE-DRAIN VOLTAGE : V SD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 CAPACITANCE : C [pF] Ta=25C f=1MHz VGS=0V Ciss 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.06 - Rev.B RK7002B Measurement circuits Data Sheet Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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