RK9410

RK9410 Transistors Switching (30V, 7A) RK9410 Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. External dimensions (Units : mm) + 0.4− 0.1 0.1 1.27 0.15 + 1.5− 0.1 Max.1.75 + 5.0− 0.2 (5) (4) (8) Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ROHM : SOP8 (4) (1) (2) (3) (4) ∗ (1) (2) (3) ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 7 28 7 28 1.3 5.2 2 150 −55∼+150 Unit V V A A A A A A W ˚C ˚C Total Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature ∗ Pw≤10ms, Duty cycle≤1% + 0.2− 0.1 Each lead has same dimensions Structure Silicon N-channel MOS FET + 3.9− 0.15 + 6.0− 0.3 + 0.5− 0.1 (1) RK9410 Transistors Thermal resistance (Ta=25°C) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit ˚C / W Electrical characteristics (Ta=25°C) Parameter Gate-Source Leakage Symbol IGSS Min. − 30 − 1.0 − RDS (on) l Yfs l∗ Ciss Coss Crss td (on)∗ tr∗ td (off)∗ tf∗ Qg∗ Qgs∗ Qgd∗ − − 5 − − − − − − − − − − Typ. − − − − 18 28 33 − 710 400 200 12 43 48 30 20.5 3.3 5.2 Max. ±10 − 1 2.5 23 37 43 − − − − − − − − 41 − − S pF pF pF ns ns ns ns nC nC nC mΩ Unit µA V µA V Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7A, VGS=10V ID=7A, VGS=4.5V ID=7A, VGS=4V ID=7A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.3Ω RGS=10Ω VDD=15V VGS=10V ID=7A Drain-Source Breakdown Voltage V (BR) DSS Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IDSS VGS (th) ∗ Pulsed Body diode characteristics (Source-Drain Characteristics) (Ta=25°C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol VSD∗ trr∗ Qrr∗ Min. − − − Typ. − 155 145 Max. 1.5 − − Unit V ns nC Test Conditions Is=5.2A, VGS=0V IDR=5.2A, VGS=0V di/dt=100A/µs ∗ Pulsed RK9410 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 100 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) REVERSE DREIN CURRENT : IDR (A) VDS=0V Pulsed Ta=125˚C 75˚C 25˚C 1 −25˚C VDS=10V Pulsed Ta=−25˚C 25˚C 75˚C 125˚C VGS=10V Pulsed 10 0.1 1 Ta=125˚C 75˚C 25˚C −25˚C 0.1 0.01 0.1 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 0.001 0.1 1 DRAIN CURRENT : I D (A) 10 SOURCE - DRAIN VOLTAGE : VGS (V) DRAIN CURRENT : I D (A) Fig.1 Reverse Drein Current vs. Source - Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 0.1 Ta=125˚C 75˚C 25˚C −25˚C 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=4V Pulsed 0.050 0.045 VGS=10V ID=7A Pulsed 0.100 Ta=25˚C Pulsed 0.080 0.060 ID = 7A 3.5A 0.040 0.01 0.020 0.001 0.1 1 DRAIN CURRENT : I D (A) 10 0.000 −50 −25 0 25 50 75 100 125 150 0.000 0 2 4 6 8 10 12 14 16 18 20 CHANNEL TEMPERATURE : Tch (˚C) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS (th) (V) 4.000 DRAIN-SOURCE VOLTAGE : VDS (V) CAPACITANCE : C (pF) 25 20 VDS 15 10 5 0 0 3.000 VGS 10 1000 Ciss Coss 100 Crss 2.000 5 Ta=25˚C VDD=24V ID=7A Pulsed 0 24 32 1.000 0.000 −50 −25 0 25 50 75 100 125 150 10 0.1 1 10 100 8 16 CHANNEL TEMPERATURE : Tch (˚C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed 10000 Ta=25˚C f=1MHz VGS=0V Pulsed 30 15 RK9410 Transistors 1000 20 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (A) 100 td (off) Ta=25˚C VDD=15V VGS=10V RG=10Ω Pulsed tr 18 16 14 12 10 8 6 VGS=5V VGS=4.5V VGS=4V VGS=3.5V tf 10 td (on) VGS=3V 4 2 VGS=2.5V 2 4 6 8 10 1 0.1 1 DRAIN CURRENT : I D (A) 10 0 0 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25˚C θth (ch-c) (t)=r (t) θth (ch-c) θth (ch-c)=6.25˚C / W PW T D=PW T 0.01 0.001 10µ 100µ 1m 10m 100m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width