RLS-73_1

RLS-73 Diodes Leadless High Speed Switching Diode RLS-73 Application High speed switching Features 1) Ultra small. (LLDS) 2) For surface mounting 3) High speed (trr=2ns Typ.) & high reliability. ROHM : LLDS JEDEC : LL-34 External dimensions (Unit : mm) CATH ODE　BAND (YELLOW) 0.4 0.4 3.4±0.2 φ1 .5 MAX Construction Silicon epitaxial planar Land size figure (Unit : mm) 5.0 R1.4 1.4 1.4 1.6 Structure ＬＬＤＳ Taping dimensions (Unit : mm) 1.75 ±0 .1 4.0±0.1 2.0±0.0 5 1.5±0.1 　　　 0 0.3MAX 3.5±0.05 8 .0±0.3 φ1 .4 ±0 .1 1 .8±0.2 TE-1 1 4 .0 ±0 .1 φ1 .0 ±0 .2 　　　　　0 3.8±0.1 1 .6±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Peak reverse current Average rectified forward current Surge current （1s） Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 -65 to +175 Unit V V mA mA mA mW ℃ ℃ Electrical characteristics (Ta=25°C) Param eter Sym bol Forward voltage Reverse current Capacitance between term inals Reverse recovery tim e VF IR Ct Trr Min. - Typ. - Max. 1.2 0.5 2.0 4.0 Unit V µA pF ns Conditions IF=100m A VR=80V VR=0.5V , f=1MHz VR=6.0V,IF=10m A,RL=50Ω Rev.C 1/3 RLS-73 Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ 1000000 Ta=125℃ Ta=25℃ 10 Ta=175℃ Ta=-25℃ 100000 Ta=175℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 1 0.1 0 0. 2 0.4 0.6 0.8 1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1.2 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 10000 1000 100 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 1 0.1 0.1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 950 100 1 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 940 Ta=25℃ Ta=25℃ IF=100mA IF=100mA n=30pcs n=30pcs 90 80 70 60 50 40 30 20 10 AVE:21.9nA 0 Ta=25℃ VR=80V n=30pcs 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.803pF Ta=25℃ VR=0.5V f=1MHz n=10pcs 930 920 AVE:926.5mV AVE:926.5mV 910 900 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 3 2.5 2 1.5 1 0.5 0 IFSM DISRESION MAP trr DISPERSION MAP Mounted on epoxy board 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 8.3ms 10 AVE:11.6A 5 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc RESERVE RECOVERY TIME:trr(ns) Ta=25℃ VR=6V IF=10mA RL=50Ω n=10pcs Ifsm 15 8.3ms 8.3ms 1cyc 10 AVE:1.46ns 5 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 00 100 1000 IM=1mA IF=10mA 0.02 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 1ms time Rth(j-l) 100 Rth(j-c) REVERSE POWER DISSIPATION:PR (W) 300us 0.015 10 0.01 DC D=1/2 0.005 1 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 10 0.001 0 0. 01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 Sin(θ＝180) 20 40 60 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 2/3 RLS-73 Diodes 0.4 0.35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V DC Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 Sin(θ＝180) D=1/2 DC 0A 0V t T Io ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 t T 0.3 0.25 0.2 0.15 0.1 0.05 0 0 Sin(θ＝180) D=1/2 VR D=t/T VR=40V Tj=175℃ VR D=t/T VR=40V Tj=175℃ 15 10 AVE:2.2kV 5 AVE:7.4kV 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 175 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 17 5 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1