Data Sheet
4.5V Drive Nch MOSFET
RMW150N03
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
PSOP8
0.5 5.0 6.0
(8)
(7)
(6)
(5)
Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive).
0~0.1
0.5
1pin mark
(1) (2)
(3)
(4) 0.4
0.22 0.9
1.27
5.0
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RMW150N03 Taping TB 2500
Inner circuit
(8) (7) (6) (5)
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm ×40mm Cu BOARD
Limits 30 20 15 60 2.5 60 3.0 150 55 to 150
Unit V V A A A A W C C
VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP PD Tch Tstg
*1 *2
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Thermal resistance Parameter Channel to Ambient
*2 MOUNTED ON 40mm ×40mm Cu BOARD
Symbol Rth (ch-a)*
Limits 41.7
Unit C / W
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2011.03 - Rev.A
RMW150N03
Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 30 1.0 10 Typ. 6.5 9.0 831 337 95 12 38 34 9 15 2.6 3.0 Max. 10 1 2.5 9.1 12.6 Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=15A, VGS=10V ID=15A, VGS=4.5V ID=15A, VDS=10V VDS=15V VGS=0V f=1MHz ID=7.5A, VDD 15V VGS=10V RL=2.0 RG=10 ID=15A, VDD 15V VGS=10V
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=2.5A, VGS=0V
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2011.03 - Rev.A
RMW150N03
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ) 15 14 13 12 DRAIN CURRENT : ID[A] 11 10 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 VGS= 2.5V VGS= 3.0V VGS= 10V VGS= 4.5V VGS= 3.5V Ta=25°C Pulsed
Fig.2 Typical Output Characteristics(Ⅱ) 15 14 13 12 DRAIN CURRENT : ID[A] 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 VGS= 2.5V VGS= 10.0V VGS= 4.5V VGS= 3.5V VGS= 3.0V Ta=25°C Pulsed
Data Sheet
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics 100 VDS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 DRAIN CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS= 4.5V VGS= 10V
1
10
.
0.1
0.01
0.001 0 1 2 3 4
1 0.01 0.1 1 10 100
GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
10
10
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1 0.01 0.1 1 10 100
1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
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2011.03 - Rev.A
RMW150N03
Fig.7 Forward Transfer Admittance vs. Drain Current 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS= 10V Pulsed
Fig.8 Reverse Drain Current vs. Sourse-Drain Voltage 100 VGS=0V Pulsed SOURCE CURRENT : Is [A] 10
Data Sheet
10
1
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
0.1
0.1 0.01
0.01 0.1 1 10 100 0 0.5 1 1.5
DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage 20 Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 10000 td(off)
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Switching Characteristics Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
ID= 7.5A 15 ID= 15.0A
tf
10
100 td(on)
5
10
tr 0 0 5 10 15 1 0.01 0.1 1 10 100
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A] Fig.12 Typical Capacitance vs. Drain-Source Voltage 10000 Ciss
Fig.11 Dynamic Input Characteristics 10
GATE-SOURCE VOLTAGE : VGS [V]
8 CAPACITANCE : C [pF] 1000
6
4 Ta=25°C VDD=15V ID=15A RG=10Ω Pulsed 0 5 10 15 20
100
Crss Ta=25°C f=1MHz VGS=0V 10 100
2
Coss 10 0.01 0.1 1
0
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
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2011.03 - Rev.A
RMW150N03
Data Sheet
Fig.13 Maximum Safe Operating Aera 1000 Operation in this area is limited by RDS(ON) (VGS=10V) NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 100 DRAIN CURRENT : ID (A) PW =100us
Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width
10
1
10
1
PW = 1ms PW =10ms
0.1
0.1 Ta = 25°C Single Pulse Mounted on a COPPER board 0.1 1 10
DC operation
0.01
0.01
Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 41.7 °C/W
0.001 0.01 0.1 1 10 100 1000
0.001 100
0.001
0.0001
DRAIN-SOURCE VOLTAGE : VDS[V]
PULSE WIDTH : Pw(s)
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5/6
2011.03 - Rev.A
RMW150N03
Measurement circuits
Data Sheet
Pulse width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10% 90%
RG
VDD
td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
VGS
Fig.1-2 Switching Waveforms
VG
ID RL
VDS
Qg VGS Qgs Qgd
IG(Const.)
D.U.T. VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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2011.03 - Rev.A
Notice
Notes
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