RMW280N03

Data Sheet 4.5V Drive Nch MOSFET RMW280N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) PSOP8 0.5 5.0 6.0 (8) (7) (6) (5) Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive). 0~0.1 0.5 1pin mark (1) (2) (3) (4) 0.4 0.22 0.9 1.27 5.0  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RMW280N03 Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm ×40mm Cu BOARD Limits 30 20 28 112 2.5 112 3.0 150 55 to 150 Unit V V A A A A W C C (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗2 ∗1 (1) (2) (3) (4) VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient * MOUNTED ON 40mm ×40mm Cu BOARD Symbol Rth (ch-a)* Limits 41.7 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A RMW280N03  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 30 1.0 25 Typ. 2.0 2.7 3130 940 350 24 81 94 50 53 10 11 Max. 10 1 2.5 2.8 3.8 Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=28A, VGS=10V ID=28A, VGS=4.5V ID=28A, VDS=10V VDS=15V VGS=0V f=1MHz ID=14A, VDD 15V VGS=10V RL=1.07 RG=10 ID=28A, VDD 15V VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A RMW280N03 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 28 26 24 DRAIN CURRENT : ID[A] 22 20 18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 VGS= 2.5V VGS= 3.0V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.5V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 28 26 24 DRAIN CURRENT : ID[A] 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 VGS= 2.5V VGS= 3.0V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.5V Ta=25°C Pulsed DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 Ta=25°C Pulsed Fig.3 Typical Transfer Characteristics 100 VDS= 10V Pulsed 10 DRAIN CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 VGS= 4.5V VGS= 10V 1 . 0.1 1 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 VGS= 4.5V Pulsed 10 10 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.1 1 10 100 0.1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A RMW280N03 　 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Reverse Drain Current vs. Sourse-Drain Voltage 100 Data Sheet 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS= 10V Pulsed SOURCE CURRENT : Is [A] VGS=0V Pulsed 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.1 1 10 100 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Switching Characteristics 10000 Ta=25°C VDD= 15V VGS=10V RG=10Ω Pulsed 15 Ta=25°C Pulsed ID= 14.0A 10 ID= 28.0A SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] td(off) 1000 tf 100 5 10 td(on) tr 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS[V] 1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.12 Typical Capacitance vs. Drain-Source Voltage 10000 Ciss Fig.11 Dynamic Input Characteristics 10 GATE-SOURCE VOLTAGE : VGS [V] 8 CAPACITANCE : C [pF] Coss 6 1000 Crss 4 Ta=25°C VDD=15V ID= 28A RG=10Ω Pulsed 0 10 20 30 40 50 60 2 Ta=25°C f=1MHz VGS=0V 100 0.01 0.1 1 10 100 0 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A RMW280N03 　 Data Sheet Fig.13 Maximum Safe Operating Aera 1000 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Operation in this area is limited by RDS(ON) (VGS=10V) 100 DRAIN CURRENT : ID (A) PW =100us 10 PW =1ms 1 PW = 10ms Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width 10 1 0.1 0.1 DC operation Ta = 25°C Single Pulse Mounted on a COPPER board 0.1 1 10 100 0.01 0.01 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 41.7 °C/W 0.001 0.01 0.1 1 10 100 1000 0.001 DRAIN-SOURCE VOLTAGE : VDS[V] 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A RMW280N03  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A