RN141S

Data Sheet PIN diode RN141S Applications High frequency switching Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6 1.2±0.05 1.6±0.1 Features 1) Ultra small mold type. (EMD2) 2) High frequency resistance is very small. EMD2 Construction Silicon epitaxial planer 0.3±0.05 0.6±0.1 Structure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory Taping specifications(Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55 ±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.26±0.05 0 0 1.25 0.06 1.3±0.06 0 0.6 φ0.5 0.95±0.06 0.90±0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 0.2 0.76±0.05 0.75±0.05 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VR IF Reverse voltage (DC) Junction temperature Tj Storage temperature Tstg Limits 50 100 150 -55 to +150 Unit V mA °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Forward resistance IR Ct Rf Min. - Typ. - Max. 1.0 0.1 0.8 2 Unit V μA pF  IF=10mA VR=50V Conditions VR=1.0V , f=1MHz IF=3mA,f=100MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.03 - Rev.C 1.7 RN141S Data Sheet 100 Ta=150℃ 10 Ta=150℃ Ta=125℃ 10 f=1MH FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 10 Ta=75℃ Ta=25℃ Ta=75℃ 0.1 Ta=25℃ 0.01 Ta=-25℃ 0.001 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 50 Ta=125℃ 1 1 1 Ta=-25℃ 0.1 0.1 0 100 200 300 400 500 600 700 800 900 1000 1100 0.0001 0 10 20 30 40 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.01 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 100 f=1MHz 10 f=10MHz 1 850 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD OPERATING RESISTANCE:rf(Ω) Ta=25℃ VR=0V 840 Ta=25℃ IF=10mA n=30pcs 830 820 1 f=100MHz 810 AVE:826.1mV 0.1 0.1 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 10 0.1 1 10 100 FREQUENCY(MHz) Ct-f CHARACTERISTICS 1000 800 VF DISPERSION MAP 2 1.8 REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=25℃ VR=50V n=30pcs 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 IR DISPERSION MAP Ct DISPERSION MAP AVE:0.663pF Ta=25℃ f=1MHz VR=1V n=10pcs 1.5 1.4 Ta=25℃ f=100MHz IF=3mA n=10pcs 1.4 1.2 1 0.8 0.6 0.4 0.2 0 AVE:0.137nA FORWARD OPERATING RESISTANCE:rf(Ω) 1.6 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 AVE:0.941Ω FORWARD CURRENT:IF(mA) rf DISPERSION MAP 5 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 4 3 AVE:1.55kV 2 AVE:0.36kV 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.03 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A