RN142S_11

Data Sheet PIN diode RN142S Applications High frequency switching Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6 1.2±0.05 Features 1) Ultra small mold type (EMD2) 2) High frequency resistance which is small and low capacity. 1.6±0.1 EMD2 Construction Silicon epitaxial planar 0.3±0.05 0.6±0.1 Structure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55 ±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.26±0.05 0 0 1.25 0.06 1.3±0.06 0 0.6 φ0.5 0.95±0.06 0.90±0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 0.2 0.76±0.05 0.75±0.05 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (DC) VR IF Forward current (DC) Pd Power dissipation Junction temperature Tj Storage temperature Tstg Limits 60 100 150 150 -55 to +150 Unit V mA mW °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Forward resistance IR Ct Rf Min. - Typ. - Max. 1.00 0.1 0.45 3 2 Unit V μA pF Ω Ω IF=10mA VR=60V Conditions VR=1.0V , f=1MHz IF=3mA,f=100MHz IF=10mA,f=100MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.03 - Rev.D 1.7 RN142S Data Sheet 100 1000 Ta=150℃ Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) Ta=150℃ 10 Ta=125℃ Ta=75℃ 1 Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 1 10 Ta=75℃ 1 Ta=25℃ 0.1 0.1 Ta=-25℃ 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.01 0 10 20 30 40 50 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 70 80 0.01 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD OPERATING RESISTANCE:rf(Ω) f=1MHz f=10MHz 1 850 FORWARD VOLTAGE:VF(mV) Ta=25℃ VR=0V 840 Ta=25℃ IF=10mA n=30pcs 10 830 f=100MHz 1 820 810 AVE:825.4mV 0.1 0.1 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 10 0.1 1 10 100 FREQUENCY(MHz) Ct-f CHARACTERISTICS 1000 800 VF DISPERSION MAP 10 9 Ta=25℃ VR=60V n=30pcs 1 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 2 Ta=25℃ f=1MHz VR=1V n=10pcs 1.9 Ta=25℃ f=100MHz IF=3mA n=10pcs REVERSE CURRENT:IR(nA) 7 6 5 4 3 2 1 0 IR DISPERSION MAP AVE:0.4448nA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Ct DISPERSION MAP AVE:0.364pF FORWARD OPERATING RESISTANCE:rf(Ω) 8 0.8 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 AVE:1.206Ω FORWARD CURRENT:IF(mA) rf DISPERSION MAP 2 1.9 5 ELECTROSTATIC DDISCHARGE TEST ESD(KV) FORWARD OPERATING RESISTANCE:rf(Ω) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 Ta=25℃ f=100MHz IF=3mA n=10pcs 4 3 2 AVE:0.71kV AVE:2.01kV AVE:1.206Ω 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ FORWARD CURRENT:IF(mA) rf DISPERSION MAP ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A