RN142ZS_08

RN142ZS Diodes PIN Diode RN142ZS Applications High frequency switching Dimensions (Unit : mm) 0.38±0.03 0～0.03 0.19±0.03 0.27±0.03 0.3±0.03 Features 1) Ultra small mold type. (GMD2) 2) Low high-frequency forward resistance (rF). / low capacitance (CT). Ａ 0.3±0.05 ROHM : GMD2 JEDEC : JEITA : dot(year week factory) Construction Silicon epitaxial planar Land size figure (Unit : mm) 0.31 0.23 0.38 Structure GMD2 Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Forward current(DC) IF Junction temperature Tj Storage temperature Tstg Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Forward resistance Symbol VF IR Ct Rf Rf Min. Typ. - Limits 30 50 150 -55 to +150 Unit V mA ℃ ℃ Max. 1.0 0.1 0.45 1.5 2.5 Unit V µA pF Ω Ω Conditions IF=10mA VR=30V VR=1.0V , f=1MHz IF=10mA,f=100MHz IF=3mA,f=100MHz Rev.B 0.57±0.05 0.6±0.05 1/2 RN142ZS Diodes Electrical characteristic curves 100 1000 Ta=150℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 10 Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 Ta=150℃ Ta=125℃ Ta=75℃ 1 100 1 Ta=25℃ Ta=-25℃ 0.1 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 5 10 15 20 25 0.01 0 1 2 3 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 4 5 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ct-f CHARACTERICTICS 1.0 1.1 VR=0V FORWARD VOLTAGE:VF(mV) 100 f=1MHz FORWARD OPERATING RESISTANCE:rf(Ω) 10 f=10MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 AVE:851.0mV Ta=25℃ IF=10mA n=30pcs 0.9 1 f=100MHz 0.8 0.7 0 0.1 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 10 0.1 100 1000 FREQENCY:f（MHz） Ct-f CHARACTERISTICS 10000 0.6 VF DISPERSION MAP 10 9 REVERSE CURRENT:IR(nA) 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP AVE:0.520nA Ta=25℃ VR=30V n=30pcs 0.5 Ta=25℃ f=1MHz VR=1V n=10pcs AVE:0.217pF 5 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.3 FORWARD OPERATING RESISTANCE:rf(Ω) 0.4 4 Ta=25℃ f=100MHz IF=3mA n=10pcs AVE:1.870Ω 3 0.2 2 0.1 1 0 Ct DISPERSION MAP 0 rf DISPERSION MAP 5 FORWARD OPERATING RESISTANCE:rf(Ω) 4 Ta=25℃ f=100MHz IF=10mA n=10pcs 3 2 AVE:0.980Ω 1 0 rf DISPERSION MAP Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0