RN242CS

PIN diode RN242CS Applications High frequency switching Dimensions (Unit : mm) Lead size figure (Unit : mm) 0.55 0.45 Features 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 Structure Construction Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage(DC) Forward current Junction temperature Storage temperature VR IF Tj Tstg Limits 30 100 150 -55 to +150 Unit V mA °C °C Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals High frequency resistance VF IR Ct Rf Min. - Typ. - Max. 1 0.1 0.35 3 1.5 Unit V µA pF Ω Ω 0.45 Conditions IF=10mA VR=30V VR=1V , f=1MHz IF=3mA,f=100MHz IF=10mA,f=100MHz www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.B 0.5 RN242CS Electrical characteristic curves 100 　 Data Sheet 1000 Ta=150 ° C 100 REVERSE CURRENT:IR(nA) 10 1 0.1 0.01 Ta=150 ° C Ta=125 ° C 10 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:I F(mA) 10 Ta=125 ° C Ta=75° C Ta=75° C 1 Ta=25° C 1 Ta=25° C Ta=-25° C 0.1 Ta=-25° C 0.1 0 100 200 300 400 500 600 700 800 900 1000 1100 0.001 0 5 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 10 15 20 25 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS 30 0.01 0 1 2 3 4 5 6 7 8 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 9 10 100 1 Ta=25° C VR=0V f=10MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 860 Ta=25° C IF=10mA n=30pcs f=1MHz FORWARD OPERATING RESISTANCE:rf(Ω) 10 FORWARD VOLTAGE:V F(mV) 850 840 f=100MHz 1 830 820 AVE:831.2mV 0.1 0.1 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 10 0.1 1 10 100 1000 FREQUENCY(MHz) Ct-f CHARACTERISTICS 810 VF DISPERSION MAP 0.5 Ta=25° C VR=30V n=30pcs 0.5 Ta=25° C f=1MHz VR=1V n=10pcs 2 1.9 FORWARD OPERATING RESISTANCE:rf(Ω) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 AVE:0.256pF 1.1 1 Ct DISPERSION MAP FORWARD CURRENT:IF(mA) rf DISPERSION MAP AVE:1.595 Ω Ta=25° C f=100MHz IF=3mA n=10pcs REVERSE CURRENT:IR(nA) 0.3 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.4 0.4 0.3 0.2 AVE:0.06169nA 0.1 0.2 0.1 0 IR DISPERSION MAP 0 1.5 1.4 1.3 FORWARD OPERATING RESISTANCE:rf(Ω) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 FORWARD CURRENT:IF(mA) rf DISPERSION MAP AVE:0.975 Ω Ta=25° C f=100MHz IF=10mA n=10pcs 5 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 4 AVE:2.47kV 3 AVE:0.63kV 2 1 C=200pF R=0Ω C=100pF R=1.5kΩ 0 ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. 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