RN262CS

PIN diode RN262CS Applications High frequency switching Dimensions (Unit : mm) Land size figure (Unit : mm) 0.55 0.45 Features 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (C T ). VMN2 Structure Construction Silicon epitaxial planar Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage Forward current Power dissipation Junction temperature Storage temperature VR IF Pd Tj Tstg Limits 30 100 100 150 -55 to +150 Unit V mA mW °C °C Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals High frequency resistance VF IR Ct Rf Min. - Typ. - Max. 1 0.1 0.4 2.8 1.5 Unit V µA pF Ω Ω IF=10mA VR=30V VR=1V , f=1MHz IF=3mA,f=100MHz IF=10mA,f=100MHz www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 0.45 Conditions 1/2 2009.12 - Rev.A 0.5 RN266CS Electrical characteristics curves 100 　 10 Data Sheet 1000 Ta=150° C Ta=125° C CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I F(mA) Ta=125° C 10 REVERSE CURRENT:IR(nA) Ta=150° C f=1MHz 100 10 1 0.1 0.01 0.001 Ta=75° C Ta=75° C 1 Ta=25° C 1 Ta=25° C Ta=-25° C 0.1 Ta=-25° C 0.1 0 100 200 300 400 500 600 700 800 900 1000 1100 0.01 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 100 1 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 860 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 10 f=10MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD OPERATING RESISTANCE:rf(Ω) f=1MHz FORWARD VOLTAGE:VF(mV) Ta=25° C VR=0V 850 Ta=25° C IF=10mA n=30pcs 840 1 f=100MHz 830 820 AVE:831.3mV 810 0.1 0.1 1 10 0.1 1 10 100 1000 FORWARD CURRENT:I F(mA) rf-IF CHARACTERISTICS FREQUENCY(MHz) Ct-f CHARACTERISTICS VF DISPERSION MAP 0.5 0.5 1.5 Ta=25° C f=1MHz VR=1V n=10pcs 1.4 Ta=25° C f=100MHz IF=3mA n=10pcs REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.4 0.4 FORWARD OPERATING RESISTANCE:rf(Ω) Ta=25° C VR=30V n=30pcs 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 AVE:1.334 Ω 0.3 0.3 0.2 0.2 AVE:0.05824nA 0.1 0.1 AVE:0.256pF 0 0 IR DISPERSION MAP Ct DISPERSION MAP FORWARD CURRENT:I F(mA) rf DISPERSION MAP 1.5 5 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 1.4 FORWARD OPERATING RESISTANCE:rf(Ω) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 AVE:0.732 Ω Ta=25° C f=100MHz IF=10mA n=10pcs 4 3 AVE:1.67kV AVE:0.46kV 1 2 0 C=200pF R=0Ω C=100pF R=1.5kΩ FORWARD CURRENT:I F(mA) rf DISPERSION MAP ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. 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