RN739D

RN739F / RN739D Diodes PIN diode RN739F / RN739D !Applications VHF / UHF band variable attenuators and AGC !External dimensions (Units : mm) RN739F 2.0±0.2 1.3±0.1 0.9±0.1 0.3 0.6 0.3±0.1 0.15±0.05 (All pins have the same dimensions) ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 RN739D 2.9±0.2 1.9±0.2 0.95 0.95 1.1 +0.2 −0.1 0.8±0.1 !Construction Silicon diffusion junction 0.2 1.6 +0.1 − 2.8±0.2 !Circuit 0.1Min. 0~0.1 (All pins have the same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Absolute maximum ratings (Ta = 25°C) Parameter DC reverse voltage DC forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Limits 50 50 100 125 −55~+125 Unit V mA mW °C °C !Electrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Capacitance between terminals Forward operating resistance Symbol VF IR CT rF Min. − − − − Typ. − − − − Max. 1.0 100 0.4 7 Unit V nA pF Ω IF=50mA VR=50V VR=35V, f=1MHz IF=10mA, f=100MHz Conditions 0.3~0.6 D5F 5F !Features 1) Multiple diodes in one small surface mount package. (UMD3, SMD3) 2) Low high-frequency forward resistance (rF) / low capacitance (CT). 3) High reliability. 0.65 0.65 1.25±0.1 2.1±0.1 0~0.1 +0.1 0.4 −0.05 +0.1 0.15 −0.06 RN739F / RN739D Diodes !Electrical characteristic curves (Ta = 25°C) CAPACITANCE BETWEEN TERMINAL : CT (pF) 10µ 100m 125°C 1.0 0.7 0.5 0.4 0.3 f=1MHz 1µ REVERSE CURRENT : IR (A) 25°C FORWARD CURRENT : IF (A) 125°C 75°C 100n 10n 75°C 10m −25°C 1n 100p 25°C 1m 0.2 f=10MHz 10p 1p 0 0.5 1.0 0 10 20 30 40 50 60 70 0.1 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 1 CAPACITANCE BETWEEN TERMINAL : CT (pF) DYNAMIC FORWARD RESISTANCE : rF (Ω) 0.7 0.5 0.4 0.3 VR=3V VR=0V f=1MHz f=100MHz 100 f=10MHz DYNAMIC FORWARD RESISTANCE : rF (Ω) 1.0 20 IF=2mA 10 10 0.2 1.0 0.1 1.0 10 0.1 100 200 300 400 500 600 10 100 FORWARD CURRENT : f (MHz) 1000 HIGH FREQUENCY : f (MHz) FORWARD CURRENT : IF (mA) Fig.4 Capacitance between terminals characteristics 2 Fig.5 High frequency characteristics Fig.6 Forward operating resistance characteristics 100 Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig.7 Derating curve (mounting on glass epoxy PCBs)