RN739DT146

RN739F / RN739D Diodes PIN diode RN739F / RN739D !External dimensions (Units : mm) !Applications VHF / UHF band variable attenuators and AGC RN739F 2.0±0.2 0.9±0.1 1.3±0.1 0.3 0.6 2.1±0.1 0.65 0~0.1 0.1Min. 1.25±0.1 0.65 !Features 1) Multiple diodes in one small surface mount package. (UMD3, SMD3) 2) Low high-frequency forward resistance (rF) / low capacitance (CT). 3) High reliability. 0.15±0.05 5F 0.3±0.1 (All pins have the same dimensions) ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 !Construction Silicon diffusion junction RN739D 2.9±0.2 1.9±0.2 1.1 +0.2 −0.1 0.95 0.95 2.8±0.2 0~0.1 +0.1 0.15 −0.06 D5F +0.1 0.4 −0.05 (All pins have the same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit DC reverse voltage VR 50 V DC forward current IF 50 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55~+125 °C !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Forward voltage Parameter VF − − 1.0 V IF=50mA Conditions Reverse current IR − − 100 nA VR=50V Capacitance between terminals CT − − 0.4 pF VR=35V, f=1MHz Forward operating resistance rF − − 7 Ω IF=10mA, f=100MHz 0.3~0.6 0.2 1.6 + −0.1 !Circuit 0.8±0.1 RN739F / RN739D Diodes CAPACITANCE BETWEEN TERMINAL : CT (pF) !Electrical characteristic curves (Ta = 25°C) 10µ 1µ 125°C 75°C 25°C 10m −25°C 1m REVERSE CURRENT : IR (A) 125°C 100n 10n 75°C 1n 100p 25°C 10p 1p 0 0.5 0 1.0 10 0.7 0.5 VR=0V 0.4 0.3 VR=3V 0.2 0.1 100 200 300 400 500 600 HIGH FREQUENCY : f (MHz) Fig.4 Capacitance between terminals characteristics 2 100 Io CURRENT (%) 30 40 50 60 70 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig.7 Derating curve (mounting on glass epoxy PCBs) 0.7 0.5 0.4 0.3 f=1MHz 0.2 0.1 f=10MHz 10 20 30 REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 1 1.0 DYNAMIC FORWARD RESISTANCE : rF (Ω) CAPACITANCE BETWEEN TERMINAL : CT (pF) Fig.1 Forward characteristics 20 1.0 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) DYNAMIC FORWARD RESISTANCE : rF (Ω) FORWARD CURRENT : IF (A) 100m f=1MHz f=100MHz f=10MHz 100 10 1.0 0.1 1.0 10 FORWARD CURRENT : IF (mA) Fig.5 High frequency characteristics 20 IF=2mA 10 10 100 1000 FORWARD CURRENT : f (MHz) Fig.6 Forward operating resistance characteristics