RN779D

Data Sheet PIN diode RN779D Applications Attenuator Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 2.9±0.2 各リー ドと も ＋0.1 Each lead has same dimension 同 寸法 0.4 　－0.05 2.8±0.2 1.6－0.1 0～0.1 0.3～0.6 1.0MIN. Features 1) Small mold type. (SMD3) 2) High reliability. (3) 0.95 ＋0.2 0.8MIN. SMD3 (2) 0.95 0.95 1.9± 0.2 (1) 0.8± 0.1 0.2 1.1± 0.2 1.1 0.1 0.01 Construction Silicon diffused junction Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 3.2±0.1 3 .2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (DC) VR IF Reverse current (DC) Junction temperature Tj Storage temperature Tstg Limits 50 50 150 55 to 150 Unit V mA °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals High frequency resistance IR Ct Rf Min. - Typ. - Max. 1.0 100 0.9 7.0 Unit V nA pF Ω Conditions IF=10mA VR=50V VR=35V , f=1MHz IF=10mA, f=100MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.03 - Rev.A 2.4 0.15－0.06 ＋0.1 RN779D Data Sheet 100 100000 Ta=125℃ Ta=75℃ 10000 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 10 Ta=125℃ Ta=150℃ Ta=25℃ Ta=-25℃ 1000 100 10 Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 50 1 1 Ta=-25℃ 1 0.1 0.1 0 100 200 300 400 500 600 700 800 900 1000 1100 0.1 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 35 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10000 10 800 FORWARD VOLTAGE:VF(mV) Ta=25℃ VR=0V 1000 100MHz 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD OPERATING RESISTANCE:rf(Ω) 790 Ta=25℃ IF=10mA n=30pcs 780 AVE:782.8mV 770 1 1MHz 10 10MHz 760 1 0.01 0.1 0.1 1 10 750 0.1 1 10 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS FREQUENCY(MHz) Ct-f CHARACTERISTICS VF DISPERSION MAP 100 90 Ta=25℃ VR=50V n=30pcs 0.6 Ta=25℃ f=1MHz VR=35V n=30pcs 5 Ta=25℃ f=100MHz IF=10mA n=30pcs REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE：26.8nA FORWARD OPERATING RESISTANCE:rf(Ω) 80 4 AVE:4.12Ω 3 0.5 2 0.4 1 AVE:0.44pF 0.3 Ct DISPERSION MAP 0 FORWARD CURRENT:IF(mA) rf DISPERSION MAP 4 ELECTROSTATIC DISCHARGE TEST ESD(KV) 3 AVE:3.44kV AVE:2.67kV 2 1 AVE:1.48kV C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ 0 ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A