RND030N20TL

RND030N20 Datasheet Nch 200V 3.0A Power MOSFET Outline 200V RDS(on) (Max.) 870m ID 3.0A PD 20W (3) (2) (1) Inner circuit e N co ew m m D es en ig de ns d f Features CPT3 (SC-63) or VDSS (3) 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. (1) (2) Packaging specifications Packaging Application *2 1 ESD PROTECTION DIODE 2 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested *1 Switching Power Supply Taping Reel size (mm) 330 Tape width (mm) 16 Type Automotive Motor Drive Basic ordering unit (pcs) Automotive Solenoid Drive Taping code Marking 2,500 TL N03N20 Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 200 V Tc = 25°C ID *1 3.0 A Tc = 100°C ID *1 1.6 A 6.0 A R Drain - Source voltage ot Continuous drain current Pulsed drain current ID,pulse *2 VGSS 30 V Avalanche energy, single pulse EAS *3 0.73 mJ Avalanche current IAR *3 1.5 A Tc = 25°C PD 20 W Ta = 25°C *4 PD 0.85 W Tj 150 °C Tstg 55 to 150 °C N Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/12 2012.08 - Rev.A Data Sheet RND030N20 Thermal resistance Values Unit Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Typ. Max. RthJC - - 6.25 °C/W RthJA - - 147 °C/W Tsold - - 265 °C e N co ew m m D es en ig de ns d f Soldering temperature, wavesoldering for 10s Min. or Parameter Electrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA Min. Typ. Max. 200 - - - - 10 Unit V VDS = 200V, VGS = 0V Zero gate voltage drain current Tj = 25°C IDSS VDS = 200V, VGS = 0V - - 100 A Tj = 125°C Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance IGSS VGS = 30V, VDS = 0V - - 10 nA VGS (th) VDS = 10V, ID = 1mA 3.2 - 5.2 V VGS = 10V, ID = 1.5A - 620 870 - 1150 1610 0.75 1.50 - RDS(on) *5 VGS = 10V, ID = 1.5A m Tj = 125°C gfs VDS = 10V, ID = 1.5A S N ot R Forward transfer admittance www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Ciss VGS = 0V - 270 - Output capacitance Coss VDS = 25V - 30 - Reverse transfer capacitance Crss f = 1MHz - 10 - VDD ⋍ 100V, VGS = 10V - 13 - Turn - on delay time tr *5 e N co ew m m D es en ig de ns d f Rise time Turn - off delay time Fall time *5 td(on) *5 td(off) tf *5 pF or Input capacitance ID = 1.5A - 13 - RL = 12 - 18 - RG = 10 - 17 - ns Gate Charge characteristics(Ta = 25°C) Values Parameter Symbol *5 Total gate charge Qg Gate - Source charge Qgs *5 Gate - Drain charge Qgd Gate plateau voltage *5 V(plateau) Conditions Min. Typ. Max. VDD ⋍ 100V - 6.7 - ID = 3.0A - 2.7 - VGS = 10V - 2.4 - VDD ⋍ 100V, ID = 3A - 7.2 - Unit nC V Body diode electrical characteristics (Source-Drain)(Ta = 25°C) Values R Parameter ot Continuous source current Symbol ISM *2 Forward voltage VSD *5 *5 Reverse recovery time trr Reverse recovery charge Qrr *5 Unit Min. Typ. Max. - - 3.0 A - - 6.0 A VGS = 0V, IS = 3.0A - - 1.5 V IS = 1.5A di/dt = 100A/s - 55 - ns - 11 - nC *1 IS Pulsed source current N Conditions Tc = 25°C *1 Limited only by maximum temperature allowed. *2 Pw  10s, Duty cycle  1% *3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C *4 Mounted on a epoxy PCB FR4 (20mm × 30mm × 0.8mm) *5 Pulsed www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 PW = 100s Drain Current : ID [A] 10 80 60 40 20 Ta=25ºC Single Pulse or Operation in this area is limited by RDS(on) e N co ew m m D es en ig de ns d f Power Dissipation : PD/PD max. [%] 120 1 PW = 1ms 0.1 PW = 10ms 0.01 0 0 25 50 75 100 125 150 0.1 175 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] 10 Ta=25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 147ºC/W R 1 N ot Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 0.1 0.01 0.0001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 4/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristic curves Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Fig.4 Avalanche Current vs Inductive Load 120 1 0.1 0.01 100 or Avalanche Energy : EAS / EAS max. [%] VDD=50V,RG=25 VGF=10V,VGR=0V Starting Tch=25ºC 80 e N co ew m m D es en ig de ns d f Avalanche Current : IAS [A] 10 0.1 1 10 60 40 20 0 100 0 Coil Inductance : L [mH] 75 100 125 150 175 Fig.7 Typical Output Characteristics(II) 3 0.9 VGS=8.0V 0.8 0.7 VGS=10.0V Ta=25ºC Pulsed VGS=10.0V 2.5 Drain Current : ID [A] 1 VGS=7.0V R 0.6 0.5 0.4 ot Drain Current : ID [A] 50 Junction Temperature : Tj [°C] Fig.6 Typical Output Characteristics(I) N 25 0.3 VGS=6.0V 0.2 Ta=25ºC Pulsed VGS=8.0V 2 VGS=7.0V 1.5 1 0.5 VGS=6.0V 0.1 0 0 0 0.2 0.4 0.6 0.8 0 1 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2 5/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristic curves Fig.9 Typical Transfer Characteristics 10 280 VDS= 10V VGS = 0V ID = 1mA or 270 260 1 Drain Current : ID [A] 250 240 230 220 210 200 190 180 e N co ew m m D es en ig de ns d f Normarize Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.8 Breakdown Voltage vs. Junction Temperature 0.1 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 0.01 0.001 -50 0 50 100 150 0 Junction Temperature : Tj [°C] N 5 6 7 8 9 10 VDS= 10V Transconductance : gfs [S] R 3.5 4 10 ot Gate Threshold Voltage : VGS(th) [V] 4.0 3 Fig.11 Transconductance vs. Drain Current VDS = 10V ID = 1mA 4.5 2 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 5.0 1 3.0 0 25 50 75 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Ta= 25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 0.01 2.5 -50 -25 1 0.1 1 10 Drain Current : ID [A] 6/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 10000 1800 1600 ID = 3A 1400 1000 800 600 400 200 0 0 e N co ew m m D es en ig de ns d f ID = 1.5A 1200 Ta=25ºC or Ta=25ºC Static Drain - Source On-State Resistance : RDS(on) [m] Static Drain - Source On-State Resistance : RDS(on) [m] 2000 Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) 2 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] VGS= 10V 1000 100 0.01 0.1 1 10 Drain Current : ID [A] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 1800 1600 R 1400 VGS = 10V ID = 1.5A 1200 1000 800 N ot Static Drain - Source On-State Resistance : RDS(on) [m] 2000 600 400 200 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 7/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Drain Current Derating Curve 120 VGS= 10V 100 Drain Current Dissipation : ID/ID max. (%) 1000 or 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= 25ºC 80 e N co ew m m D es en ig de ns d f Static Drain - Source On-State Resistance : RDS(on) [m] 10000 60 40 20 0 0.01 0.1 1 10 0 Drain Current : ID [A] 25 50 75 100 125 150 175 N ot R Junction Temperature : Tj [°C] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 8/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics 10000 10000 Switching Time : t [ns] Ciss 100 Coss 10 1000 tf e N co ew m m D es en ig de ns d f Capacitance : C [pF] 1000 Ta=25ºC VDD= 100V VGS= 10V RG=10 or Ta = 25ºC f = 1MHz VGS = 0V 100 td(off) 10 td(on) tr Crss 1 1 0.01 0.1 1 10 100 0.01 1000 Drain - Source Voltage : VDS [V] 0.1 1 10 Drain Current : ID [A] Fig.19 Dynamic Input Characteristics 20 Ta=25ºC VDD= 100V ID= 3A RG=10 16 14 R 12 10 8 N ot Gate - Source Voltage : VGS [V] 18 6 4 2 0 0 5 10 15 Total Gate Charge : Qg [nC] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 9/12 2012.08 - Rev.A Data Sheet RND030N20 Electrical characteristic curves Fig.20 Source Current vs. Source - Drain Voltage Fig21 Reverse Recovery Time vs.Source Current 10 1000 Ta=125ºC Ta=75ºC Ta=25ºC Ta= 25ºC 0.1 0.01 or Reverse Recovery Time : trr [ns] 1 e N co ew m m D es en ig de ns d f Source Current : IS [A] VGS=0V 100 Ta=25ºC di / dt = 100A / s VGS = 0V 10 0.0 0.5 1.0 1.5 0.1 Source-Drain Voltage : VSD [V] 1 10 N ot R Source Current : IS [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 10/12 2012.08 - Rev.A Data Sheet RND030N20 Measurement circuits Fig.1-1 Switching Time Measurement Circuit Pulse width ID VDS RL D.U.T. 50% 10% VDD RG 90% 50% 10% VGS VDS 10% 90% td(on) 90% or VGS Fig.1-2　Switching Waveforms td(off) tr toff e N co ew m m D es en ig de ns d f ton tf Fig.2-1 Gate Charge Measurement Circuit VGS Fig.2-2 Gate Charge Waveform VG ID VDS Qg RL VGS D.U.T. IG(Const.) Qgs VDD Qgd Charge Fig.3-1 Avalanche Measurement Circuit VGS IAS D.U.T. RG Fig.3-2 Avalanche Waveform VDS L V(BR)DSS IAS VDD VDD 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD N ot R EAS = www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 11/12 2012.08 - Rev.A Data Sheet RND030N20 Dimensions (Unit : mm) A2 D B A b1 c1 H or E L3 L2 CPT3 L4 A1 b2 Lp L1 L e N co ew m m D es en ig de ns d f b3 c e b x B A A3 l3 l1 e b6 b5 l2 DIM N ot R A1 A2 A3 b b1 b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 ｌ1 ｌ2 ｌ3 MILIMETERS MIN MAX 0.00 0.15 2.20 2.50 0.25 0.55 0.75 5.00 5.30 5.00 0.75 0.40 0.60 0.40 0.60 6.30 6.70 5.40 5.80 2.30 9.00 10.00 2.20 2.80 0.80 1.40 1.20 1.80 5.30 0.90 1.00 1.60 0.25 MILIMETERS MIN MAX 1.00 5.20 2.50 5.50 10.00 INCHES MIN 0 0.087 MAX 0.006 0.098 0.01 0.022 0.197 0.03 0.209 0.20 0.03 0.016 0.016 0.248 0.213 0.024 0.024 0.264 0.228 0.09 0.354 0.087 0.031 0.047 0.394 0.11 0.055 0.071 0.209 0.035 0.039 - 0.063 0.01 INCHES MIN - MAX 0.04 0.205 0.098 0.217 0.394 Dimension in mm/inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 12/12 2012.08 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. or 2) Before you use our Products, please contact our sales representative and verify the latest specifications : e N co ew m m D es en ig de ns d f 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. R 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. N ot 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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