RP1A090ZP_1007

1.5V Drive Pch MOSFET RP1A090ZP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) MPT6 (Single) Features 1) Low Voltage Drive(1.5V drive). 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RP1A090ZP Type Taping TR 1000   Inner circuit (6) (5) (4) ∗2  Absolute maximum ratings (Ta = 25° C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw≤10μs, Duty cycle≤1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits −12 ±10 ±9 Unit V V A A A A W °C °C (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 ±36 −1.6 −36 2.0 150 −55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit °C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.B RP1A090ZP  Electrical characteristics (Ta = 25° C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) Min. −12 −0.3 l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * 12 Typ. 8 11 15 19 7400 800 750 35 120 350 170 59 11 9 Max. ±10 −1 −1.0 12 16 23 38 S pF pF pF ns ns ns ns nC nC nC mΩ Unit μA V μA V Conditions VGS=±10V, VDS=0V ID=−1mA, VGS=0V VDS=−12V, VGS=0V VDS=−6V, ID=−1mA ID=−9A, VGS=−4.5V ID=−4.5A, VGS=−2.5V ID=−4.5A, VGS=−1.8V ID=−1.8A, VGS=−1.5V ID=−9A, VDS=−6V VDS=−6V VGS=0V f=1MHz ID=−4.5A, VDD −6V VGS=−4.5V RL=1.3Ω RG=10Ω ID=−9A, VGS=−4.5V VDD −6V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25°C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. −1.2 Unit V Conditions Is=−9A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.07 - Rev.B RP1A090ZP  Electrical characteristic curves Data Sheet 9 8 DRAIN CURRENT : -ID[A] 7 6 5 4 3 2 1 0 0 0.2 DRAIN CURRENT : -ID[A] VGS= -2.5V VGS= -1.8V VGS= -1.5V VGS= -1.2V 7 6 5 4 3 2 1 0 DRAIN CURRENT : -ID[A] VGS= -10V VGS= -4.5V Ta=25°C Pulsed 9 8 VGS= -10V VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V VGS= -1.0V VGS= -1.2V 10 VDS= -6V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= -1.0V 0.4 0.6 0.8 1 Ta=25°C Pulsed 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 100 100 VGS= -2.5V Pulsed 10 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 1 10 100 1 0.1 1 10 100 1 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.8V Pulsed 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.5V Pulsed 100 VDS= -6V Pulsed 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 1 10 100 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 1 10 100 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.07 - Rev.B RP1A090ZP Data Sheet 1 80 70 60 50 40 30 20 10 0 0 2 4 6 ID= -9.0A ID= -4.5A SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10 100 90 Ta=25°C Pulsed 10000 1000 td(off) 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 tf td(on) Ta=25°C VDD= -6V VGS=-4.5V RG=10Ω Pulsed 1 10 100 10 tr 0.001 0 0.5 1 1 8 10 0.01 0.1 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] CAPACITANCE : C [pF] 4 3 2 1 0 0 10 20 30 40 50 100000 Ciss 10000 DRAIN CURRENT : -ID (A) 1000 100 10 1 0.1 0.01 Operation in this area is limited by R DS(ON) (VGS=-4.5V) PW =100us PW =1ms PW = 10ms DC operation 1000 Coss 100 Crss Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 Ta=25°C VDD= -6V ID= -9.0A RG=10Ω Pulsed 60 70 Ta = 25°C Single Pulse MOUNTED ON CERAMIC BOARD 10 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Maximum Safe Operating Aera NORMARIZED TRANSIENT THERMAL 　RESISTANCE : r (t) 10 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.16 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.07 - Rev.B RP1A090ZP  Measurement circuits 　 Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.07 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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