4V Drive Pch MOSFET
RP1E050RP
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
MPT6
Features 1) Low On-resistance. 2) High power package. 3) 4V drive.
(6)
(5)
(4)
(1)
(2)
(3)
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E050RP Taping TR 1000 ○
Inner circuit
(6) (5) (4)
∗2
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Symbol VDSS VGSS
Limits 30 20 5
*1
Unit V V A A A A W C C
(1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Continuous Pulsed Continuous Pulsed
ID IDP IS ISP PD Tch Tstg
20 1.6 20 2.0 150 55 to +150
*1 *2
Thermal resistance Parameter Channel to Ambient
*Mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 62.5
Unit C / W
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1/5
2010.04 - Rev.A
RP1E050RP
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transistor admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 4 Typ. 36 52 58 850 120 120 9 25 55 30 9.2 2.4 3.6 Max. 10 1 2.5 50 72 80 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=5A, VGS=10V m ID=2.5A, VGS=4.5V ID=2.5A, VGS=4.0V ID=5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6.0 RG=10 ID=5A, VDD 15V VGS=5V RL=3.0 RG=10
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=5A, VGS=0V
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2/5
2010.04- Rev.A
RP1E050RP
Electrical characteristics curves
10 8 6 4 2 VGS= -3.0V 0 0 0.2 0.4 0.6 0.8 1 VGS= -2.5V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 10 8 6 4 2 0 0 2 4 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V
Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 10
Data Sheet
VDS= -10V Pulsed
DRAIN CURRENT : -ID[A]
1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
VGS= -3.5V
VGS= -10V VGS= -4.5V VGS= -4.0V
0.1
VGS= -3.0V
0.01
VGS= -2.5V
0.001 6 8 10 0 1 2 3
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ)
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
1000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
Ta=25°C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V
1000
VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
1000
VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
100
100
100
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10
10 0.1 1
DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ)
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
1000
VGS= -4.0V Pulsed
10
REVERSE DRAIN CURRENT : -Is [A]
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
VDS= -10V Pulsed
10
VGS=0V Pulsed
1
100
1
Ta= -25°C Ta=25°C Ta=75°C Ta=125°C
0.1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10
0.1 0.01 0.1 1 10
0.01
DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
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3/5
2010.04 - Rev.A
RP1E050RP
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 200 1000 td(off) SWITCHING TIME : t [ns]
Ta=25°C Pulsed ID= -5.0A Ta=25°C VDD= -15V VGS= -10V RG=10Ω Pulsed 10 GATE-SOURCE VOLTAGE : -VGS [V] 8 6 4 2 0 0 5 10
Data Sheet
150
tf 100
100
10 td(on) 1 tr
50 ID= -2.5A 0 0 5 10 15
Ta=25°C VDD= -15V ID= -5.0A RG=10Ω Pulsed 15 20
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
10000 CAPACITANCE : C [pF]
1000 Ta=25°C f=1MHz VGS=0V Ciss 100 DRAIN CURRENT : -ID (A) 10 1 0.1 0.01 0.01 0.1 1 10 100 0.1 1 10 100
PW =1ms PW = 10ms
Operation in this area is limited by R DS(on) (VGS=-10V)
PW =100us
1000
100
Crss Coss
Ta = 25°C Single Pulse MOUNTED ON CERAMIC BOARD
DC operation
10
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Maximum Safe Operating Area
10
NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
1
0.1
Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W
0.01 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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4/5
2010.04 - Rev.A
RP1E050RP
Measurement circuits
Pulse Width
Data Sheet
VGS
ID RL D.U.T.
VDS
VGS
10% 50% 10%
90%
50% 10% 90%
RG VDD
VDS td(on) ton 90% tr td(off) toff tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID RL IG(Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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5/5
2010.04 - Rev.A
Notice
Notes
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