RP1E050RP_1007

4V Drive Pch MOSFET RP1E050RP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) MPT6 (Single) Features 1) Low On-resistance. 2) High power package. 3) 4V drive. (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E050RP Taping TR 1000 ○  Inner circuit (6) (5) (4) ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 5 *1 Unit V V A A A A W C C (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 20 1.6 20 2.0 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.B RP1E050RP  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transistor admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 4 Typ. 36 52 58 850 120 120 9 25 55 30 9.2 2.4 3.6 Max. 10 1 2.5 50 72 80 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=5A, VGS=10V m ID=2.5A, VGS=4.5V ID=2.5A, VGS=4.0V ID=5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6.0 RG=10 ID=5A, VDD 15V VGS=5V RL=3.0 RG=10 Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=5A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.07- Rev.B RP1E050RP  Electrical characteristics curves 10 8 6 4 2 VGS= -3.0V 0 0 0.2 0.4 0.6 0.8 1 VGS= -2.5V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 10 8 6 4 2 0 0 2 4 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V 　 Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 10 Data Sheet VDS= -10V Pulsed DRAIN CURRENT : -ID[A] 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VGS= -3.5V VGS= -10V VGS= -4.5V VGS= -4.0V 0.1 VGS= -3.0V 0.01 VGS= -2.5V 0.001 6 8 10 0 1 2 3 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 1000 VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 VGS= -4.0V Pulsed 10 REVERSE DRAIN CURRENT : -Is [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VDS= -10V Pulsed 10 VGS=0V Pulsed 1 100 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10 0.1 0.01 0.1 1 10 0.01 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.07 - Rev.B RP1E050RP STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 200 1000 td(off) SWITCHING TIME : t [ns] 　 Ta=25°C Pulsed ID= -5.0A Ta=25°C VDD= -15V VGS= -10V RG=10Ω Pulsed 10 GATE-SOURCE VOLTAGE : -VGS [V] 8 6 4 2 0 0 5 10 Data Sheet 150 tf 100 100 10 td(on) 1 tr 50 ID= -2.5A 0 0 5 10 15 Ta=25°C VDD= -15V ID= -5.0A RG=10Ω Pulsed 15 20 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] 1000 Ta=25°C f=1MHz VGS=0V Ciss 100 DRAIN CURRENT : -ID (A) 10 1 0.1 0.01 0.01 0.1 1 10 100 0.1 1 10 100 PW =1ms PW = 10ms Operation in this area is limited by R DS(on) (VGS=-10V) PW =100us 1000 100 Crss Coss Ta = 25°C Single Pulse MOUNTED ON CERAMIC BOARD DC operation 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Maximum Safe Operating Area 10 NORMARIZED TRANSIENT THERMAL 　RESISTANCE : r (t) 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W 0.01 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.07 - Rev.B RP1E050RP  Measurement circuits 　 Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.07- Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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