Data Sheet
4V Drive Nch MOSFET
RP1E090XN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
MPT6
(Single)
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
(6)
(5)
(4)
(1)
(2)
(3)
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E090XN Taping TR 1000
Inner circuit
(6) (5) (4)
∗2
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Symbol VDSS VGSS
Limits 30 20 9
*1
Unit V V A A A A W C C
(1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Continuous Pulsed Continuous Pulsed
ID IDP IS ISP PD Tch Tstg
36 1.6 36 2.0 150 55 to 150
*1 *2
Thermal resistance Parameter Channel to Ambient
*Mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 62.5
Unit C / W
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2011.02 - Rev.A
RP1E090XN
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 5.0 Typ. 12 17 19 440 170 85 8 30 30 8 6.8 1.6 2.6 Max. 10 1 2.5 17 24 27 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V m ID=9A, VGS=4.5V ID=9A, VGS=4.0V ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.32 RG=10 ID=9A, VDD 15V VGS=5V
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=9A, VGS=0V
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2011.02 - Rev.A
RP1E090XN
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ) 9 8 7 DRAIN CURRENT : ID[A] 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V Ta=25°C Pulsed
Data Sheet
Fig.2 Typical Output Characteristics(Ⅱ) 9 8 DRAIN CURRENT : ID[A] 7 6 5 4 3 2 1 0 0 2 4 6 8 10 VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V Ta=25°C Pulsed
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed
DRAIN CURRENT : ID[A]
100
0.1
10 VGS= 4.0V VGS= 4.5V VGS= 10V 1
0.01
0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V]
0.1
1 DRAIN-CURRENT : ID[A]
10
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
1000
VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
100
100
10
10
1 0.1 1 DRAIN-CURRENT : ID[A] 10
1 0.1 1
DRAIN-CURRENT : ID[A]
10
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2011.02 - Rev.A
RP1E090XN
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 1000
Fig.8 Forward Transfer Admittance vs. Drain Current 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
VGS= 4.0V Pulsed
100
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
VDS= 10V Pulsed
10
10
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10
0.1 0.01
0.1
1
10
DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 50 Ta=25°C Pulsed
40
ID= 4.5A ID= 9.0A
SOURCE CURRENT : Is [A]
1
30
0.1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
20
10
0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V]
0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Switching Characteristics 1000 td(off) tf SWITCHING TIME : t [ns] 100 Ta=25°C VDD= 15V VGS=10V RG=10W Pulsed 10
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : VGS [V]
8
6
td(on) 10
4
2
tr 1 0.01 0.1 1 10 0 0 2 4 6 8 10
Ta=25°C VDD= 15V ID= 9A Pulsed 12 14
DRAIN-CURRENT : ID[A]
TOTAL GATE CHARGE : Qg [nC]
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2011.02 - Rev.A
RP1E090XN
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Data Sheet
Fig.14 Maximum Safe Operating Aera 1000 Operation in this area is limited by RDS(ON) (VGS=10V) 100 DRAIN CURRENT : ID (A)
10000
CAPACITANCE : C [pF]
Ciss 1000
10
PW =100us
Crss 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V]
1
PW =1ms PW = 10ms
0.1
Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10
DC operation
0.01 100 DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
Ta=25°C Single Pulse
1
0.1
0.01
Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=62.5°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001 0.01 0.1 1 10 100 1000
0.001
0.0001
PULSE WIDTH : Pw(s)
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5/6
2011.02 - Rev.A
RP1E090XN
Measurement circuits
Data Sheet
Pulse width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10% 90%
RG
VDD
td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
VGS
Fig.1-2 Switching Waveforms
VG
ID RL
VDS
Qg VGS Qgs Qgd
IG(Const.)
D.U.T. VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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6/6
2011.02 - Rev.A
Notice
Notes
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R1120A
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