RP1L080SN

Data Sheet 4V Drive Nch MOSFET RP1L080SN Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) MPT6 (Single) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching (6) (5) (4) (1) (2) (3) Packaging specifications Package Type Code Basic ordering unit (pieces) RP1L080SN Taping TR 1000   Inner circuit (6) (5) (4) ∗2 (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg *1 Limits 60 20 8.0 32 1.6 32 2.0 150 55to150 Unit V V A A A A W C C *1 *2 Power dissipation Channel temperature Range of storage temperature *1 Pw≤10s, Duty cycle≤1% *2 Mounted on a ceramic board Thermal resistance Parameter Channel to Ambient * Mounted on a ceramic board Symbol Rth (ch-a) * Limits 62.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A RP1L080SN Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 60 1.0 8.5 Typ. 17 19 20 1700 330 170 18 25 70 30 40 5.0 9.0 Max. 10 1 3.0 24 27 28 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=8.0A, VGS=10V m  ID=8.0A, VGS=4.5V ID=8.0A, VGS=4.0V ID=8.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.0A, VDD 30V VGS=10V RL=7.5 RG=10 VDD 30V ID=8.0A, VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=8.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RP1L080SN Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 8 VGS=10.0V 7 6 Drain Current : ID [A] 5 4 3 2 VGS=2.5V 1 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] VGS=4.5V VGS=4.0V VGS=3.5V VGS=2.6V Ta=25°C pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 8 VGS=10.0V 7 6 Drain Current : ID [A] 5 4 3 2 1 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Ta=25°C pulsed VGS=4.0V VGS=2.8V VGS=2.7V VGS=2.6V VGS=2.9V VGS=2.8V VGS=2.5V Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 VGS=4.0V VGS=4.5V VGS=10V 10 10 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RP1L080SN 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance |Yfs| [S] 10 Drain Current : ID [A] 100 VDS=10V pulsed Fig.8 Typical Transfer Characteristics 1 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID[A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 80 70 60 50 40 30 20 10 ID=8.0A Ta=25°C pulsed 10 Source Current : IS [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] ID=4.0A 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 10000 VDD≒30V VGS=10V RG=25Ω Ta=25°C Pulsed tf td(off) 100 td(on) 10 tr 12 Ta=25°C VDD=30V ID=8A Pulsed Fig.12 Dynamic Input Characteristics 10 Gate-Source Voltage : VGS [V] 1000 Switching Time : t [ns] 8 6 4 2 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 5 10 15 20 25 30 35 40 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RP1L080SN 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 100000 Ta=25°C f=1MHz VGS=0V 1000 Fig.14 Maximum Safe Operating Area 10000 100 Operation in this area is limited by RDS(on) (VGS = 10V) 1000 Ciss Drain Current : ID[ A ] Capacitance : C [pF] 10 PW = 100μs 100 Crss Coss 1 PW = 1ms Ta=25°C Single Pulse Mounted on a ceramic board. （30mm × 30mm × 0.8mm) 0.1 1 10 PW = 10ms 10 0.1 DC Operation 100 1 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 0.01 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=62.5°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RP1L080SN  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A