RPR-359F_1

RPR-359F Sensors Reflective photosensor (photoreflector) RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost no effect from stay light. !Application Copiers, Compact disc players !External dimensions (Units : mm) 8.7±0.1 0.5 3.6 0.5 3.6 0.5 0.65 5.8±0.1 2.0±0.3 12Min. 0.6±0.1 4− 0.5±0.1 !Absolute maximum ratings (Ta=25°C) Parameter Forward current Input (LED) Reverse voltage Power dissipation Collector-emitter voltage Output (Phototransistor) Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Symbol IF VR PD VCEO VECO IC PC Topr Tstg Limits 50 5 80 30 4.5 30 100 −25∼+85 −40∼+100 Unit mA V mW V V mA mW ˚C ˚C 5.8±0.5 (4.2) (2.5) 2.1±0.5 4.4 !Features 1) A plastic lens is used for high sensitivity. 2) A built-in visible light filter minimizes the influence of stray light. 3) Low collector-emitter saturation voltage. 4) Lightweight and compact. 1 2 3 4 Notes : 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. 1 Cathode 2 Anode 3 Collector 4 Emitter 0.65 4.5±0.1 0.35 1/3 RPR-359F Sensors !Electrical and optical characteristics (Ta=25°C) Parameter Input characteristics Output characteristics Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Transfer characteristics Collector-emitter saturation voltage Response time ∗ Standard paper (90% reflection) Symbol VF IR ICEO λP IC ∗ VCE(sat) tr·tf Min. − − − − 200 − − Typ. 1.3 − − 800 500 0.1 10 Max. 1.6 10 0.5 − 1800 0.3 − Unit V µA µA nm µA V µs IF=50mA VR=5V VCE=10V Conditions − VCC=5V, IF=20mA, RL=100Ω, d=3.5mm IF=20mA, IC=100µA VCC=10V, IF=20mA, RL=100Ω !Electrical and optical characteristic curves POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD/PC (mW) 100 PC FORWARD CURRENT : IF (mA) 1A Ta=25°C FORWARD VOLTAGE : VF (V) 2.0 80 PD 100 1.6 60 1.2 10mA 1mA 0.8 10 40 1 20 0.4 0 0 20 40 60 80 100 0.1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (°C) Fig.1 Power dissipation / collector power dissipation vs. ambient temperature Fig.2 Forward current vs. forward voltage Fig.3 Forward voltage vs. ambient tempereture 10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 DARK CURRENT : ICEO (µA) VCC=5V Standard paper (90% reflection) d=3.5mm 2.4 2.2 Standard paper (90% reflection) d=3.5mm IF=40mA 30mA 1 1 VCE=30V 20V 10V 0.1 0.1 20mA 15mA 10mA 5mA 5 10 15 20 25 0.01 0.01 0.1 1 10 100 0.001 −100 −80 −60 −40 −20 0 20 40 60 80 100 120 140 FORWARD CURRENT : IF (mA) COLLECTOR−EMITTER VOLTAGE : VCE (V) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Collector current vs. forward current Fig.5 Output characteristics Fig.6 Dark current vs.ambient temperature 2/3 RPR-359F Sensors RELATIVE COLLECTOR CURRENT : IC (%) 150 d 140 130 120 110 100 90 VCE=5V 80 IF=20mA 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DISTANCE : d (mm) RELATIVE COLLECTOR CURRENT : IC (%) 160 FORWARD CURRENT : IF (mA) 100 140 120 100 80 60 40 20 0 −60 −40 −20 0 20 40 60 80 100 80 60 40 20 0 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C) Fig.7 Relative output vs. distance Fig.8 Relative output vs. ambient temperature Fig.9 Forward current vs. ambient temperature !Circuit for testing transfer characteristics Reflector d=3.5mm IF IC VCC=5V IF=20mA VCC 3/3