RPT-38PB3F

Phototransistor, top view type RPT-38PB3F The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Application Optical control equipment Receiver for sensors Dimensions (Units : mm) Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Dimension in parenthesis are show for reference. φ3.4 φ3.1±0.2 +0.1 −0.3 2 1 (2.5) 2.5±1 Min.24 2− 0.5 Max.1 Features 1) High sensitivity. 2) Almost no effect from stray light. 4−0.6 5.2±0.3 1.1 Internal connection diagram 1 Emitter 2 Collector Absolute maximum ratings (Ta = 25C) Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Limits 32 5 30 150 −25~+85 −30~+85 Unit V V mA mW °C °C Electrical and optical characteristics (Ta = 25C) Parameter Light current Dark current Peak sensitivity wavelength Collector-emitter saturation voltage Half-angle Response time Symbol IC ICEO Min. 2.0 − − − − − Typ. − − 800 − ±36 10 Max. − 0.5 − 0.4 − − Unit mA μA nm V deg μs Conditions VCE=5V, E=500LX VCE=10V(Black box) − IC=1mA, E=500LX − VCC=5V, IC=1mA, RL=100Ω λP VCE(sat) θ1 / 2 tr·tf www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.06 - Rev.A RPT-38PB3F Electrical and optical characteristic curves 1000 1000 8 Data Sheet RELATIVE LIGHT CURRENT : IC (%) VCE=5V DARK CURRENT : ICEO (nA) 500 LIGHT CURRENT : IC (mA) 6 100 VCE=10V VCE=20V VCE=30V 200 100 50 10 4 1 20 10 −25 0 25 50 75 100 2 0.1 −25 0 25 50 75 100 0 250 500 750 1000 1250 AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C) ILLUMINANCE : E (Lx) Fig.1 Dark current vs. ambient temperature Fig.2 Relative output vs. ambient temperature Fig.3 Light current vs. irradiance 100 10 COLLECTOR DISSIPATION : PC (mW) 600 800 1000 1200 1600 RELATIVE SENSITIVITY : IC (%) LIGHT CURRENT : IC (mA) 160 8 E=1000Lux 750Lux 75 120 6 50 4 80 500Lux 250Lux 25 2 0 0 40 2 4 6 8 10 12 14 16 0 400 0 −25 0 25 50 75 100 COLLECTOR−EMITTER VOLTAGE : VCE (V) OPTICAL WAVELENGTH : λ (nm) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Output characteristics Fig.5 Spectral sensitivity Fig.6 Collector dissipation vs. ambient temperature 1000 Ta=25°C VCE=5V RESPONSE TIME : tr (μs) 30° 100 RL=1kΩ 40° 50° 80 60 60° 10 RL=500Ω 70° RL=100Ω 1 0.1 40 80° 90° 100 20 1 10 COLLECTOR CURRENT : IC (mA) 80 60 40 20 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT (deg) RELATIVE LUMINOUS INTENSITY (%) Fig.7 Response time vs. collector current Fig.8 Directional pattern www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/2 2010.06 - Rev.A RELATIVE LUMINOUS INTENSITY (%) 20° 10° 0° 100 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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