RQ1A070AP

Data Sheet 1.5V Drive Pch MOSFET RQ1A070AP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSMT8). (1) (2) (3) (4) Abbreviated symbol : SG  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RQ1A070AP Taping TR 3000   Inner circuit (8) (7) (6) (5) ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain ∗1 (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE Limits 12 0 to8 7 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg *1 28 1 28 1.5 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 83.3 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A RQ1A070AP  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) Min. 12 0.3 l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * 11 Typ. 10 13 18 24 7800 900 850 25 135 550 260 80 12 13 Max. 10 10 1.0 14 19 27 48 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, V GS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=7A, VGS=4.5V ID=3.5A, VGS=2.5V ID=3.5A, VGS=1.8V ID=1.4A, VGS=1.5V VDS=6V, ID=7A VDS=6V VGS=0V f=1MHz VDD 6V, ID=3.5A, VGS=4.5V RL=1.7 RG=10 VDD 6V, ID=7A, VGS=4.5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=7A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RQ1A070AP Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 7 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 7 VGS=-1.2V Ta=25°C pulsed 6 VGS=-1.2V 5 Drain Current : -ID [A] VGS=-4.5V VGS=-2.5V VGS=-1.8V VGS=-1.5V Ta=25°C pulsed 6 VGS=-4.5V VGS=-2.5V VGS=-1.8V VGS=-1.5V 5 Drain Current : -ID [A] 4 4 3 3 2 VGS=-1.0V 2 VGS=-1.0V 1 1 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C pulsed VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Static Drain-Source On-State Resistance RDS(on) [mW ] 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 0.1 0.01 0.1 1 10 Drain Current : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-2.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-1.8V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] 10 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 10 1 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RQ1A070AP 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-1.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] 100 Fig.8 Forward Transfer Admittance vs. Drain Current VDS=-6V pulsed Forward Transfer Admittance Yfs [S] 10 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.9 Typical Transfer Characteristics 10 VDS=-6V pulsed 10 Fig.10 Source Current vs. Source-Drain Voltage VGS=0V pulsed Source Current : -Is [A] 1 Drain Currnt : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 Gate-Source Voltage : -VGS [V] 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V] Fig.11 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C pulsed 40 ID=-1.4A Switching Time : t [ns] ID=-7.0A 30 1000 10000 Fig.12 Switching Characteristics Static Drain-Source On-State Resistance RDS(on) [mW ] tf td(off) VDD≒-6V VGS=-4.5V RG=10W Ta=25°C Pulsed 100 tr 20 10 10 td(on) 0 0 2 4 6 8 Gate-Source Voltage : -VGS [V] 1 0.01 0.1 1 10 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RQ1A070AP 　 Data Sheet Fig.13 Dynamic Input Characteristics 5 Ta=25°C VDD=-6V ID=-7A Pulsed 10000 100000 Fig.14 Typical Capacitance vs. Drain-Source Voltage 4 Gate-Source Voltage : -VGS [V] Ta=25°C f=1MHz VGS=0V Ciss Capacitance : C [pF] 3 2 1000 Coss 1 Crss 0 0 20 40 60 80 100 Total Gate Charge : Qg [nC] 100 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] Fig.15 Maximum Safe Operating Area 100 Normalized Transient Thermal Resistance : r（t） Operation in this area is limited by RDS(on) (VGS=-4.5V) PW = 100μs 10 Drain Current : -ID [ A ] PW = 1ms Fig.16 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Ta=25°C Single Pulse 1 PW = 10ms 1 0.1 0.1 DC Operation Ta=25°C Single Pulse Mounted on a ceramic board. (30mm☓30mm☓0.8mm) 0.1 1 10 100 0.01 Mounted on a ceramic board. (30mm☓30mm☓0.8mm) Rth(ch-a)=83.3°C/W Rth(ch-a)(t)=r(t)☓Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.01 Drain-Source Voltage : -VDS [ V ] Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RQ1A070AP  Measurement circuits 　 Data Sheet Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A