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RQ1C065UNTR

RQ1C065UNTR

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SMD8

  • 描述:

    MOSFET N-CH 20V 6.5A TSMT8

  • 数据手册
  • 价格&库存
RQ1C065UNTR 数据手册
RQ1C065UN   Nch 20V 6.5A Middle Power MOSFET    Datasheet l Outline VDSS 20V RDS(on)(Max.) 22mΩ ID ±6.5A PD 1.5W             TSMT8                               l Inner circuit l Features 1) Low on - resistance. 2) 1.5V Drive 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8). 5) Pb-free lead plating ; RoHS compliant l Packaging specifications Embossed Tape Packing l Application Type Switching Reel size (mm) Tape width (mm) 180 8 Basic ordering unit (pcs) Taping code Marking 3000 TR VB l Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Symbol Value Unit VDSS ID 20 V ±6.5 ±26 ±10 1.5 0.7 150 -55 to +150 A A V W W ID,pulse*1 VGSS PD*2 PD*3 Tj Power dissipation Junction temperature Range of storage temperature Tstg ℃ ℃                                                                                                                                          www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001                RQ1C065UN          Datasheet                                     l Thermal resistance Parameter Symbol Thermal resistance, junction - ambient Values Unit Min. Typ. Max. RthJA*2 - - 83.3 ℃/W RthJA*3 - - 178 ℃/W l Electrical characteristics (T a = 25°C) Parameter Symbol Drain - Source breakdown voltage Breakdown voltage temperature coefficient Conditions V(BR)DSS VGS = 0V, ID = 1mA  ΔV(BR)DSS  ID = 1mA    ΔTj     referenced to 25℃ Values Unit Min. Typ. Max. 20 - - V - 29 - mV/℃ Zero gate voltage drain current IDSS VDS = 20V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V - - ±10 μA VGS(th) VDS = 10V, ID = 1mA 0.3 - 1.0 V - -1.6 - mV/℃ VGS = 4.5V, ID = 6.5A - 16 22 VGS = 2.5V, ID = 6.5A - 19 27 VGS = 1.8V, ID = 3.2A - 24 32 VGS = 1.5V, ID = 1.3A - 29 58 RG f = 1MHz, open drain - 2 - Ω |Yfs| *4 VDS = 10V, ID = 6.5A 6 - - S Gate threshold voltage Gate threshold voltage temperature coefficient  ΔVGS(th)   ID = 1mA    ΔTj     referenced to 25℃ Static drain - source on - state resistance Gate input resistance Forward Transfer Admittance RDS(on)*4 mΩ *1 Pw≦10μs , Duty cycle≦1% *2 Mounted on a ceramic board (30×30×0.8mm) *3 Mounted on a FR4 (20×20×0.8mm) *4 Pulsed                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/11                                              20150730 - Rev.001 RQ1C065UN                 Datasheet l Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 870 - Output capacitance Coss VDS = 10V - 190 - Reverse transfer capacitance Crss f = 1MHz - 85 - VDD ⋍ 10V,VGS = 4.5V - 7 - tr*4 ID = 3.2A - 30 - td(off)*4 RL ⋍ 3.1Ω - 70 - tf*4 RG = 10Ω - 25 - Turn - on delay time Rise time Turn - off delay time Fall time td(on)*4 pF ns l Gate charge characteristics (Ta = 25°C) Values Parameter Symbol Total gate charge Qg*4 Gate - Source charge Qgs*4 Gate - Drain charge Qgd*4 Conditions VDD ⋍ 10V, ID = 6.5A, VGS = 4.5V Unit Min. Typ. Max. - 11 - - 2.0 - - 2.1 - nC l Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Body diode continuous forward current Symbol Conditions IS Unit Min. Typ. Max. - - 1 A - - 26 A - - 1.2 V Ta = 25℃ Body diode pulse current ISP*1 Forward voltage VSD*4 VGS = 0V, IS = 6.5A                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal     Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power     dissipation                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs.      Junction Temperature Fig.8 Typical Transfer Characteristics                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Electrical characteristic curves Fig.9 Gate Threshold Voltage vs.      Junction Temperature Fig.10 Forward Transfer Admittance vs.      Drain Current Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State    Resistance vs. Gate Source Voltage                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Electrical characteristic curves Fig.13 Static Drain - Source On - State    Resistance vs. Junction Temperature Fig.14 Static Drain - Source On - State      Resistance vs. Drain Current (I)                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Electrical characteristic curves Fig.15 Static Drain - Source On - State      Resistance vs. Drain Current (II) Fig.16 Static Drain - Source On - State      Resistance vs. Drain Current (lII) Fig.17 Static Drain - Source On - State      Resistance vs. Drain Current (IV) Fig.18 Static Drain - Source On - State      Resistance vs. Drain Current (V)                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Electrical characteristic curves Fig.19 Typical Capacitance vs.       Drain - Source Voltage Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics Fig.22 Source Current vs.       Source Drain Voltage                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Measurement circuits Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.001 RQ1C065UN                 Datasheet l Dimensions                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.001
RQ1C065UNTR 价格&库存

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RQ1C065UNTR
    •  国内价格 香港价格
    • 1+6.235291+0.75362
    • 10+3.4298210+0.41454
    • 50+3.0892750+0.37338
    • 100+2.44871100+0.29596
    • 500+2.20546500+0.26656
    • 1000+2.091951000+0.25284
    • 2000+2.035192000+0.24598
    • 4000+1.816264000+0.21952

    库存:801