Data Sheet
4V Drive Nch MOSFET
RQ1E100XN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8).
(1) (2)
(3) (4)
Abbreviated symbol : XS
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RQ1E100XN Taping TR 3000 ○
Inner circuit
(8) (7) (6) (5)
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Limits 30 20 10 36 1.25 36 1.5 150 55 to 150
Unit V V A A A A W C C
VDSS VGSS *1 Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg
*1 *1
(1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
*1 *2
Thermal resistance Parameter Channel to Ambient
*Mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 83.3
Unit C / W
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Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * * Min. 30 1.0 4.9 Typ. 7.5 9.5 10.0 1000 340 170 12 33 50 14 12.7 2.6 6.0 Max. 10 1 2.5 10.5 13.3 14.0 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V m ID=10A, VGS=4.5V ID=10A, VGS=4.0V ID=10A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5A, VDD 15V VGS=10V RL=3.0 RG=10 ID=10A VDD 15V VGS=5V
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=10A, VGS=0V
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RQ1E100XN
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ) 10 Ta=25°C Pulsed 8 DRAIN CURRENT : ID[A]
Data Sheet
Fig.2 Typical Output Characteristics(Ⅱ) 10 VGS= 2.8V 8 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V
VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V
VGS= 2.5V
6
6
4
4
2 VGS= 2.5V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V]
2 Ta=25°C Pulsed 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed Ta=25°C Pulsed
Fig.3 Typical Transfer Characteristics 100
10 DRAIN CURRENT : ID[A]
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
VGS= 4.0V VGS= 4.5V VGS= 10V
1
10
.
0.1
0.01
0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100
10
1 0.1 1 10 DRAIN-CURRENT : ID[A]
1 0.1 1 10 100 DRAIN-CURRENT : ID[A]
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Fig.8 Forward Transfer Admittance vs. Drain Current 100
Data Sheet
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 100 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
VDS= 10V Pulsed
10
10
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10
0.1 0.01
0.1
1
10
100
DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 50 ID= 5.0A 40 ID= 10.0A 30 Ta=25°C Pulsed
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
20
0.1
10
0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V]
0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Switching Characteristics 10000 GATE-SOURCE VOLTAGE : VGS [V] td(off) tf Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 10
Fig.12 Dynamic Input Characteristics
8
SWITCHING TIME : t [ns]
1000
6
100 td(on) 10
4 Ta=25°C VDD= 15V ID= 10A RG=10Ω Pulsed 0 5 10 15 20 25
2
tr 1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] 0
TOTAL GATE CHARGE : Qg [nC]
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Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ciss
Data Sheet
Fig.14 Maximum Safe Operating Aera 1000 Operation in this area is limited by RDS(ON) (VGS=10V) 100 DRAIN CURRENT : ID (A)
CAPACITANCE : C [pF]
1000
10
PW =100us
Crss
PW =1ms 1 PW = 10ms 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10
100 Ta=25°C f=1MHz VGS=0V 10 0.01 0.1
Coss
DC operation
1
10
100
0.01 0.01
100
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
Ta=25°C Single Pulse NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
1
0.1
0.01
Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=83.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001 0.01 0.1 1 10 100 1000
0.001
0.0001
PULSE WIDTH : Pw(s)
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2011.04 - Rev.A
RQ1E100XN
Measurement circuits
Data Sheet
Pulse width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10% 90%
RG
VDD
td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
VGS
Fig.1-2 Switching Waveforms
VG
ID RL
VDS
Qg VGS Qgs Qgd
IG(Const.)
D.U.T. VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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2011.04 - Rev.A
Notice
Notes
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R1120A
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