RR264M-400_10

Rectifier Diode RR264M-400  Applications Gneral rectification  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3.5±0.2  Features 1)Small power mold type（PMDU） 2)High Reliability ① PMDU  Construction Silicon diffused junction 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1  Structure  Taping specifications（Unit : mm） 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX  Absolute maximum ratings (Ta=25 C) Parameter Symbol VR Reverse voltage(DC) IF Forward current(DC) Average rectified forward current(*1) Io IFSM Forward current surge peak （60Hz/1cyc） Junction temperature Tj Storage temperature Tstg (*1)Mounting on epoxy board. 180°Half sine wave Limits 400 1 0.7 25 150 -55 to +150 Unit V A A A C C  Electrical characteristics（Ta=25 C） Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 1.1 10 Unit V uA IF=0.7A VR=400V Conditions www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.10 - Rev.E 3.05 RR264M-400 Electrical characteristics curves 　 Data Sheet 1 Ta=75 C Ta=125 C Ta=150 C Ta=25 C 100000 100 Ta=150 C Ta=125 C REVERSE CURRENT : IR(nA) FORWARD CURRENT : IF(A) 0.1 1000 100 10 1 0.1 Ta=75 C Ta=25 C Ta=-25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 f=1MHz 10 Ta=-25 C 0.01 1 0 100 200 300 400 0.001 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 970 500 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 150 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : VF(mV) 960 REVERSE CURRENT : IR(nA) Ta=25C IF=1A n=30pcs 450 400 350 300 250 200 150 100 50 Ta=25C VR=400V n=30pcs 950 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 140 130 120 110 100 90 80 70 60 50 AVE:99.5pF Ta=25 C f=1MHz VR=0V n=10pcs 940 AVE:34.13nA 930 AVE:940.7mV 920 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 150 10 100 Ta=25 C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs REVERSE RECOVERY TIME : trr(us) 9 8 7 6 5 4 3 2 1 0 AVE:4.860us PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm Ifsm 100 1cyc 1cyc PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 50 83 8.3ms 50 AVE:44.0A 0 0 1 10 100 IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 100 1cyc 1000 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) IM=10mA IF=0.35A 1.5 DC PEAK SURGE FORWARD CURRENT : IFSM(A) 1ms time FORWARD POWER DISSIPATION : Pf(W) Rth(j-a) 300us 100 D=1/2 1 Sin( = 180) 8.3ms 50 Rth(j-c) 10 0.5 0 1 10 100 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 TIME : t(ms) IFSM-t CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.10 - Rev.E RR264M-400 　 2 0A 0 Data Sheet 0.01 Io t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2 0A 0V t Io VR D=t/T VR=200V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.008 0V 0 1.5 DC VR D=t/T VR=200V Tj=150 C REVERSE POWER DISSIPATION:PR (W) 1.5 DC T 0.006 Sin(=180) D=1/2 DC 1 D=1/2 1 0.004 D=1/2 0.002 0.5 Sin(=180) 0.5 Sin(=180) 0 0 100 200 300 400 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE : Ta(℃) Derating Curve"(Io-Ta)" CASE TEMPARATURE : Tc( ℃) Derating Curve"(Io-Tc)" 30 25 AVE:28.4kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 AVE:6.90kV 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.10 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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