RRE04EA4D

Data Sheet Rectifier Diode RRE04EA4D ●Applications General Rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2 .9±0.1 ＋0.1 Each read has same 0.4　－0.05 各リードとも同寸法 dimensions 0.16±0.1 0.06 (5) (4) 1.6 2.8±0.2 ●Features 1)Small mold type. (TSMD5) 2)High Reliability. (1) 0.95 (2) 0.95 (3) ＋0.2 －0.1 0～0.1 0.33±0.03 0.7±0.1 0.85±0.1 1.0Max 0.3～0.6 TSMD5 ●Construction Silicon epitaxial planer 1.9±0.2 Structure ROHM : TSMD5 dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 3.2±0.08 1.75±0.1 8.0±0.2 3 .2±0.08 4.0±0.1 φ1.1±0.1 0～0.5 5.5±0.2 3.2±0.08 1.1±0.08 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current (*1) Io IFSM Tj Tstg Forward current surge peak Junction temperature Storage temperature (*1) 1/2 x Io at per diode Conditions D≤0.5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 400 400 0.4 2 150 - 55 to +150 Unit V V A A °C °C Electrical characteristics (Tj=25°C) Parameter Symbol VF Forward voltage IR Reverse current * per diode Conditions IF=0.2A VR=400V Min. － － Typ. 0.95 0.01 Max. 1.1 1 Unit V μA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.09 - Rev.A RRE04EA4D 　 Data Sheet 1 1000 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100 Tj=125°C 0.1 Tj=150°C Tj=125°C Tj=25°C 0.01 Tj=75°C 10 Tj=75°C 1 Tj=25°C per diode 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0 100 200 per diode 300 400 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 f=1MHz 960 955 FORWARD VOLTAGE:VF(mV) Tj=25°C IF=0.2A n=20pcs per diode CAPACITANCE BETWEEN TERMINALS:Ct(pF) 950 945 940 935 930 925 AVE:941mV 1 per diode 0.1 0 10 20 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 920 100 Tj=25°C VR=400V n=20pcs per diode 10 5 4.5 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 4 3.5 3 2.5 2 1.5 1 0.5 AVE:3.39pF Tj=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT:IR(nA) 1 AVE:4.6nA 0.1 IR DISPERSION MAP 0 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A RRE04EA4D 　 Data Sheet 10 9 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 8 7 6 5 4 3 2 1 0 IFSM DISPERSION MAP IFSM 8.3ms 1cyc AVE:7.40A per diode 100 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 10 8.3ms 1cyc 1 per diode 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 10.0 9.0 ELECTROSTATIC DISCHARGE TEST ESD(KV) IFSM per diode PEAK SURGE FORWARD CURRENT:IFSM(A) t 8.0 7.0 6.0 5.0 AVE:6.84kV 4.0 3.0 2.0 AVE:4.58kV 10 1 per diode 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1.0 0.0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 1000 0.8 D.C. 0.7 D=0.8 FORWARD POWER DISSIPATION:Pf(W) 0.6 0.5 0.4 0.3 0.2 0.1 On glass-epoxy substrade D=0.5 half sin wave TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 100 Rth(j-c) 10 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.09 - Rev.A RRE04EA4D 　 Io t T VR D=t/T VR=200V Tj=150°C Data Sheet 0A 0.8 0.7 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.6 0.5 0.4 half sin wave 0.3 0.2 0.1 0 0 30 60 90 120 150 D=0.8 D=0.5 0A 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR 0.8 0.7 D.C. 0.6 0.5 0.4 half sin wave 0.3 0.2 0.1 0 0 30 60 90 120 D=0.8 D=0.5 0V D=t/T VR=200V Tj=150°C On glass-epoxy substrate 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A