RRH040P03

4V Drive Pch MOSFET RRH040P03 Structure Silicon P-channel MOSFET Features 1) Low Gate Charge. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type RRH040P03 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗1 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Source current (Body Diode) Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP Is Isp PD ∗1 ∗2 ∗1 Limits −30 ±20 ±4 ±16 −1.6 −16 2.0 150 −55 to +150 Unit V V A A A A W Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Tch Tstg °C °C Thermal resistance Parameter Channel to Ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.12 - Rev.A RRH040P03 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Symbol IGSS V (BR)DSS IDSS VGS (th) RDS (on)∗ l Yfs l ∗ Ciss Coss Crss td(on) ∗ tr ∗ td(off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Min. − −30 − −1.0 − − − 3 − − − − − − − − − − Typ. − − − − 55 85 95 − 480 70 70 7 18 50 37 5.2 1.6 1.6 Max. ±10 − −1 −2.5 75 115 125 − − − − − − − − − − − Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Test Conditions VGS=±20V, VDS=0V ID=−1mA, VGS=0V VDS=−30V, VGS=0V VDS=−10V, ID=−1mA ID=−4A, VGS=−10V ID=−2A, VGS=−4.5V ID=−2A, VGS=−4V ID=−4A, VDS=−10V VDS=−10V VGS=0V f=1MHz ID=−2A, VDD VGS=−10V RL=7.5Ω RG=10Ω ID=−4A, VDD VGS=−5V RL=3.8Ω RG=10Ω −15V −15V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Test Conditions Is=−4A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.12 - Rev.A RRH040P03 Electrical characteristic curves 10 8 6 4 VGS= -3.0V 2 VGS= -2.5V 0 0 0.2 0.4 0.6 0.8 1 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V Ta=25°C Pulsed 20 18 Ta=25°C Pulsed 10 Data Sheet DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 16 14 12 10 8 6 4 2 0 0 VGS= -10V VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 VGS= -4.0V VGS= -3.5V VGS= -3.0V 0.1 0.01 2 4 6 8 10 1 1.5 2 2.5 3 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 1000 VGS= -10V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= -4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VDS= -10V Pulsed REVERSE DRAIN CURRENT : -Is [A] 1000 10 10 VGS=0V Pulsed 1 100 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10 0.01 0.1 1 10 0.01 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.12 - Rev.A RRH040P03 Data Sheet 300 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m Ω] 10000 Ta=25°C Pulsed SWITCHING TIME : t [ns] GATE-SOURCE VOLTAGE : -VGS [V] 250 200 150 100 50 0 0 5 10 ID= -2.0A 1000 td(off) tf Ta=25°C VDD= -15V VGS=-10V RG=10Ω Pulsed 5 4 3 2 1 0 0 1 2 3 Ta=25°C VDD= -15V ID= -4.0A RG=10Ω Pulsed 4 5 6 ID= -4.0A 100 td(on) 10 tr 1 0.01 0.1 1 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V 1000 Ciss 100 Crss Coss 10 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.12 - Rev.A RRH040P03 Measurement circuit Pulse Width VGS ID RL D.U.T. VDS Data Sheet VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG VDD D.U.T. VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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