RRH140P03

4V Drive Pch MOSFET RRH140P03 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Package Type RRH140P03 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗1 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain Absolute maximum ratings (Ta = 25C) (1) (2) (3) (4) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP Is Isp PD ∗1 ∗2 ∗1 Limits −30 ±20 ±14 ±56 −1.6 −56 2.0 150 −55 to +150 Unit V V A A A A W ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Pulsed Continuous Pulsed Tch Tstg °C °C Thermal resistance Parameter Channel to Ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.02 - Rev.A RRH140P03 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Symbol IGSS V (BR)DSS IDSS VGS (th) RDS (on)∗ l Yfs l ∗ Ciss Coss Crss td(on) ∗ tr ∗ td(off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Min. − −30 − −1.0 − − − 20 − − − − − − − − − − Typ. − − − − 5.0 6.7 7.3 − 8000 1000 1000 32 80 360 200 80 18 30 Max. ±10 − −1 −2.5 7.0 9.4 10.2 − − − − − − − − − − − Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Test Conditions VGS=±20V, VDS=0V ID=−1mA, VGS=0V VDS=−30V, VGS=0V VDS=−10V, ID=−1mA ID=−14A, VGS=−10V ID=−7A, VGS=−4.5V ID=−7A, VGS=−4.0V ID=−14A, VDS=−10V VDS=−10V VGS=0V f=1MHz ID=−7A, VDD VGS=−10V RL=2.1Ω RG=10Ω ID=−14A, VDD VGS=−5V RL=1.1Ω RG=10Ω −15V −15V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Test Conditions Is=−14A, VGS=0V www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.02 - Rev.A RRH140P03 Electrical characteristic curves 20 18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 VGS= -2.2V VGS= -2.4V Data Sheet DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.0V Ta=25°C Pulsed 20 18 16 14 12 10 8 6 4 2 0 0 2 4 VGS= -10V Ta=25°C VGS= -4.5V Pulsed VGS= -4.0V 100 VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 VGS= -2.6V VGS= -2.6V VGS= -2.4V 1 0.1 VGS= -2.2V 6 8 10 0.01 1 1.5 2 2.5 3 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics(Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta =25°C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 100 VGS= -10V Pulsed 100 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 1 0.1 1 10 100 1 0.1 1 10 100 1 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C REVERSE DRAIN CURRENT : -Is [A] 100 VGS= -4.0V Pulsed 100 VDS= -10V Pulsed 100 VGS=0V Pulsed 10 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5 1 0.1 1 0.1 1 10 100 0.1 0.01 0.01 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.02 - Rev.A RRH140P03 50 10000 10 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] SWITCHING TIME : t [ns] 40 30 20 10 0 0 5 10 ID= -14.0A td(off) 1000 tf GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C Pulsed Ta=25°C VDD= -15V VGS=-10V RG=10Ω Pulsed Ta=25°C VDD= -15V ID=-14A RG=10Ω 6 Pulsed 8 4 2 0 0 20 40 60 80 100 120 140 160 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics ID= -7.0A 100 td(on) 10 15 0.01 0.1 1 t 10 100 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics 100000 Ta=25°C f=1MHz VGS=0V 1000 100 Operation in this area is limited by R DS(ON) (VGS=-10V) PW=100us 10000 DRAIN CURRENT : -ID (A) CAPACITANCE : C [pF] Ciss 10 1 0.1 0.01 PW=1ms DC operation PW = 10ms 1000 Coss Crss 100 0.01 0.1 1 10 100 Ta = 25°C Single Pulse Mounted on a CERAMIC BOARD 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Maximum Safe Operating Aera NORMARIZED TRANSIENT THERMAL   RESISTANCE : r (t) 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W 0.01 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.02 - Rev.A RRH140P03 Measurement circuit VGS ID RL D.U.T. RG VDD VDS Data Sheet Pulse Width VGS 10% 50% 10% VDS 90% td(on) ton tr td(off) toff 90% 50% 10% 90% tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS ID RL VDS VG Qg VGS IG(Const.) D.U.T. RG VDD Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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