RRQ045P03

4V Drive Pch MOSFET RRQ045P03 Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High Power Package. 3) High speed switching. 1pin mark Dimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0~0.1 (1) (2) (3) Application Switching 0.4 0.16 Each lead has same dimensions Abbreviated symbol : UB Packaging specifications Package Type Code Basic ordering unit (pieces) RRQ045P03 Taping TR 3000 Inner circuit (6) (5) (4) ∗2 ∗1 0.3~0.6 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1)Drain (2)Drain (3)Gate (4)Source (5)Drain (6)Drain Absolute maximum ratings (Ta=25°C) Parameter Drain−source voltage Gate−source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg ∗1 ∗2 ∗1 Limits −30 ±20 ±4.5 ±18 −1.0 −18 1.25 150 −55 to +150 Unit V V A A A A W °C °C Thermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 100 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.06 - Rev.A RRQ045P03 Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Symbol IGSS Min. − −30 − −1.0 − ∗ Data Sheet Typ. − − − − 25 34 38 − 1350 180 180 10 35 110 65 14 3.5 4.2 Max. ±10 − −1 −2.5 35 48 53 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=−1mA, VGS=0V VDS=−30V, VGS=0V VDS=−10V, ID=−1mA ID=−4.5A, VGS=−10V ID=−2.2A, VGS=−4.5V ID=−2.2A, VGS=−4.0V VDS=−10V, ID=−4.5A VDS=−10V VGS=0V f=1MHz VDD −15V ID=−2.2A VGS=−10V RL 6.8Ω RG =10Ω VDD −15V ID=−4.5A VGS=−5V RL 3.3Ω RG =10Ω Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage IDSS VGS(th) Static drain-source on-state resistance Foward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tur n-on delay time Rise time Tur n-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS(on) − − Yfs Ciss Coss ∗ 3.5 − − − − − − − Crss td(on) ∗ tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ − − − Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −4.5A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.06 - Rev.A RRQ045P03 Electrical characteristics curves 4.5 Ta=25°C Pulsed DRAIN CURRENT : -ID [A] VGS= -10V VGS= -4.5V VGS= -4.0V 4.5 VGS= VGS= VGS= VGS= -10V -4.5V -4.0V -3.0V Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 10 VDS= -10V Pulsed Data Sheet DRAIN CURRENT : -ID [A] 1 3 3 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VGS= -3.0V 1.5 VGS= -2.5V 0.1 1.5 VGS= -2.5V 0.01 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 0.001 0 1 2 3 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed 1000 VGS= -10V Pulsed 1000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 VGS= -4.0V VGS= -4.5V VGS= -10V 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 REVERSE DRAIN CURRENT : -Is [A] VGS= -4.0V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 10 VDS= -10V Pulsed 10 VGS=0V Pulsed 1 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10 0.1 0.01 0.1 1 10 0.01 0 0.5 1 1.5 DRAIN-CURRENT : -ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.06 - Rev.A RRQ045P03 200 10000 Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 td (off) tf Ta=25°C VDD = -15V VGS= -10V RG=10Ω Pulsed 10 GATE-SOURCE VOLTAGE : -VGS [V] Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 150 ID = -4.5A 100 ID = -2.2A 8 6 100 4 Ta=25°C VDD = -15V ID = -4.5A RG=10Ω Pulsed 0 5 10 15 20 25 30 50 10 td (on) tr 2 0 0 2 4 6 8 10 1 0.01 0.1 1 10 0 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 Ciss 1000 Coss CAPACITANCE : C [pF] 100 Crss Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Measurement circuits VGS ID RL D.U.T. RG VDD VDS Pulse Width VGS 10% 50% 10% VDS 90% td(on) ton tr td(off) toff 90% 50% 10% 90% tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL VDS Qg VGS IG(Const.) RG D.U.T. Qgs VDD Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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