RSAC18CS

Data Sheet Ultra Low Capacitance ESD Protection Diode RSAC18CS lApplications ESD Protection lDimensions (Unit : mm) lLand size figure (Unit : mm) 0 .16±0.05 0.6±0.05 0.55 0.45 lFeatures 1)Ultra small mold type.(VMN2) 2)Low capacitance. 3)High reliability. 4)Bi chip-mounter,automatic mounting is possible. 0.156 0.35±0.1 0.9±0.05 1.0±0.05 VMN2 0.37±0.03 lStructure lConstruction Silicon epitaxial planer ROHM : VMN2 dot (year week factory) lTaping dimensions (Unit : mm) 4±0.1 2±0.05 φ 1.55 0.2±0.05 0.45 3.5±0.05 1.75±0.1 1.1±0.05 φ 0.5 0 .7±0.05 2±0.05 4.0±0.1 0.52 lAbsolute maximum ratings (Ta=25C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol Vz Zener voltage Reverse current Capacitance between terminals IR Ct Limits 100 150 -55 to +150 Unit mW C C Min. 18.20 - Typ. 0.3 Max. 19.35 0.1 - Unit V nA pF Conditions IZ=2mA VR=13V VR=0V , f=1MHz *1) Zener voltage (VZ) shall be measured at 40ms after loading current. *2) Electrical characteristic assurance is just only zener direction. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.10 - Rev.A 8.0±0.2 0.5 RSAC18CS 　 Data Sheet 10 10000 Ta=150°C Ta=125°C 1000 1 Ta=25°C REVERSE CURRENT:IR (pA) ZENER CURRENT:Iz(mA) 100 Ta=125°C 10 Ta=75°C 1 Ta=25°C Ta=75°C Ta=150°C 0.1 0.01 10 15 20 25 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 0.1 0 5 10 15 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 f=1MHz 20 Ta=25°C IZ=2mA n=30pcs 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER VOLTAGE:Vz(Ｖ) 18 AVE:18.66V 1 17 16 0.1 0 1 2 3 4 5 6 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 15 Vz DISPERSION MAP 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25°C VR=13V n=30pcs 0.5 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(pA) 0.4 0.3 AVE:0.31pF 0.2 AVE:16.29pA 0.1 10 IR DISPERSION MAP 0 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.10 - Rev.A RSAC18CS 　 Data Sheet 10000 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) DYNAMIC IMPEDANCE:Zz(Ω) Rth(j-c) 1000 100 100 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 AVE：0.96kV 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A