RSAC6.8CS

Data Sheet Ultra Low Capacitance ESD Protection Diode RSAC6.8CS lApplications ESD Protection lDimensions (Unit : mm) lLand size figure (Unit : mm) 0 .16±0.05 0.55 0.45 0.9±0.05 1.0±0.05 4)By chip-mounter, automatic mounting is possible. VMN2 lConstruction Silicon epitaxial planar 0.156 0.35±0.1 0.37±0.03 lStructure ROHM : VMN2 dot (year week factory) + day lTaping dimensions (Unit : mm) 4±0.1 2±0.05 φ 1.55 0.2±0.05 0.45 lFeatures 1)Ultra small mold type.(VMN2) 2)Low Capacitance. 3)High Reliability. 0.6±0.05 3.5±0.05 1.75±0.1 1.1±0.05 φ 0.5 0.7±0.05 2±0.05 4.0±0.1 0.52 lAbsolute maximum ratings (Ta=25C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg Limits 100 150 -55 to +150 Unit mW C C lElectrical characteristics (Ta=25C) Parameter Symbol Vz Zener voltage Reverse current Capacitance between terminals IR Ct Min. 6.7 - Typ. 0.3 Max. 7.33 1.0 - Unit V μA pF Conditions IZ=5mA VR=3.0V VR=0V , f=1MHz * Zener voltage (VZ) shall be measured at 40ms after loading current. * Electrical characteristic assurance is just only zener direction. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.10 - Rev.A 8.0±0.2 0.5 RSAC6.8CS 　 Data Sheet 100 Ta=25°C 10 ZENER CURRENT:Iz(mA) Ta=-25°C Ta=75°C REVERSE CURRENT:IR (pA) Ta=125°C 1000 Ta=125°C 100 1 Ta=75°C 10 Ta=25°C 1 0.1 0.01 0.001 5 6 7 8 9 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 0.1 0 1 2 3 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 f=1MHz 7.3 Ta=25°C IZ=5mA n=30pcs 7.2 CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER VOLTAGE:Vz(Ｖ) 7.1 1 7 AVE:7.05V 6.9 0.1 0 0.5 1 1.5 2 2.5 3 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 6.8 Vz DISPERSION MAP 50 Ta=25°C VR=3V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 0.9 0.8 0.7 0.6 0.5 AVE:0.303pF 0.4 0.3 0.2 0.1 0 IR DISPERSION MAP Ct DISPERSION MAP Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(pA) 40 30 20 AVE:8.68pA 10 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.10 - Rev.A RSAC6.8CS 　 Data Sheet 1000 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) DYNAMIC IMPEDANCE:Zz(Ω) 100 Rth(j-c) 100 10 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 AVE：1.00kV 0 C=200pF R=0Ω C=150pF R=330Ω ESD DISPERSION MAP C=100pF R=1.5kΩ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A