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RSB12JS2_11

RSB12JS2_11

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    RSB12JS2_11 - Low Capacitance Protection Device - Rohm

  • 数据手册
  • 价格&库存
RSB12JS2_11 数据手册
Data Sheet Low Capacitance Protection Device RSB12JS2 Applications ESD Protection Dimensions(Unit : mm ) Land size figure(Unit : mm) 1.0 0.5 0.5 1.6±0.1 0.22±0.05 0.13±0.05 (5) (4) 1.6±0.1 Features 1) Ultra small mold type. (EMD6) 2) Low capacitance 3) Bi direction 0.25 0.15 1.2±0.1 0~0.1 0.45 0.4 EMD6 (1) (2) 0.5 (3) Construction Silicon Epitaxial Planar 0.5 1.0±0.1 0.5±0.05 Structure (6) (5) (4) ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) (1) (2) (3)  Please make 3 and 6 Pin open in circuit upon use. Taping specifications(Unit : mm ) 1.75±0.1 4.0±0.1 2.0±0.05 φ1.5 −0 +0.1 0.3±0.1 1.65±0.1 5.5±0.2 0~0.1 3.5±0.05 8.0±0.2 1.7±0.05 1PIN 4.0±0.1 φ0.8±0.1 0.65±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation Junction temperature Storage temperature P Tj Tstg Limits 150 150 55 to 150 Unit mW °C °C Electrical characteristic (Ta=25°C) (Rating of per diode) Parameter Symbol Min. Typ. Zener voltage Reverse current Capacitance between terminals VZ IR Ct 9.6 1 Max. 14.4 0.10 - Unit V μA pF Conditions IZ=5mA VR=9V f=1MHz,VR=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.04 - Rev.C 1.65±0.01 1.55 (6) 0.3 0.15 0.25 RSB12JS2 Electrical characteristics curve Data Sheet 10 REVERSE CURRENT:IR (nA) 10000 1000 100 10 1 0.1 0.01 0.001 Ta=150℃ Ta=125℃ 10 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA) 1 Ta=25℃ Ta=75℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 Ta=-25℃ Ta=150℃ 1 0.01 0.001 12 13 14 15 16 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 17 0.0001 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 0.1 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 13.8 13.7 13.6 13.5 AVE:13.572V 13.4 13.3 Vz DISRESION MAP REVERSE CURRENT:IR(nA) 10 CAPACITANCE BETWEENTERMINALS:Ct(pF) 1.5 Ta=25℃ VR=9V n=30pcs 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 Ct DISRESION MAP AVE:0.996pF Ta=25℃ f=1MHz VR=0V n=10pcs ZENER VOLTAGE:Vz(V) Ta=25℃ IZ=5mA n=30pcs 9 8 7 6 5 4 3 2 1 0 AVE:0.3089nA IR DISRESION MAP 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) DYNAMIC IMPEDANCE:Zz(Ω) 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA 10 10 1ms time 300us 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10 1 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
RSB12JS2_11 价格&库存

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