RSB12W

Data Sheet Low Capacitance Protection Device RSB12W Applications ESD Protection Dimensions(Unit : mm) Land size figure(Unit : mm) 1.0 0.5 0.5 0.15±0.05 1.6±0.2 0.3±0.1 　　　 0.05 0.7 0.2±0.1 　　-0.05 (2) 0.5 0.5 1.0±0.1 (1) 0.55±0.1 0.7±0.1 0.1Min Features 1)Ultra small mold type.(EMD3) 2)Low capacitance 3)Bi direction (3) 1.6±0.2 0.7 0.8±0.1 0～0.1 0.7 0.6 EMD3 0.6 Construction Silicon epitaxial planer Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot(year week factory) Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 φ1.5 0.1 0 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 1.8±0.2 5.5±0.2 1.8±0.1 φ0.5±0.1 0～0.1 8.0±0.2 Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation Junction temperature Storage temperature P Tj Tstg Limits 150 150 55 to 150 Unit mW °C °C Electrical characteristics (Ta=25°C) Parameter Symbol Zener voltage Reverse current Capacitance between terminals VZ IR Ct Min. 9.6 - Typ. 1 Max. 14.4 0.10 - Unit V μA pF Conditions IZ=5mA VR=9V f=1MHz,VR=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.04 - Rev.B 1.3 0.9±0.2 RSB12W Electrical characteristics curve 　 Data Sheet 10 10000 1000 REVERSE CURRENT:IR (nA) Ta=150 ℃ Ta=125 ℃ Ta=75 ℃ Ta=25 ℃ Ta=℃ 10 f=1MHz 1 Ta=25 ℃ Ta=℃ 100 10 1 0.1 0.01 0.001 0.1 Ta=75 ℃ Ta=125 ℃ Ta=150 ℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA) 1 0.01 0.001 11 12 13 14 15 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 16 0.0001 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 8 7 6 5 4 3 2 1 0 Vz DISRESION MAP AVE:0.3089nA 0.1 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 13.8 1.5 CAPACITANCE BETWEENTERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) ZENER VOLTAGE:Vz(Ｖ) 13.7 13.6 13.5 AVE:13.572V 13.4 13.3 Ta=25℃ IZ=5mA n=30pcs 9 Ta=25℃ VR=9V n=30pcs 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 AVE:0.996pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISRESION MAP Ct DISRESION MAP 100 10000 Mounted on epoxy board IM=1mA 1ms TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) DYNAMIC IMPEDANCE:Zz(Ω) IF=10mA time 1000 300us Rth(j) ｶﾞﾗｽｴﾎﾟｷｼ基板実装時 IM=10mA IF=100mA 10 100 1ms time Rth(j) 300us 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10 10 0.001 0.01 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1 10 100 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A