RSB27K2

Data Sheet Bi direction ESD Protection Diode RSB27K2 lApplications ESD Protection lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.7 0.15±0.05 0.6 lFeatures 1)Small mold type. (UMD4) 2)High reliability. 3)Bi direction. 1.25±0.1 2.1±0.1 0～0.1 (4) 0.65 0.65 (1) 0.1Min 1.3 UMD4 lConstruction Silicon epitaxial planer 1.3±0.1 0.7 0.9±0.1 lStructure ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82 dot (year week factory) 1Pin Mark lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Symbol Power dissipation (*) Pd Junction temperature Tj Storage temperature Tstg (*) Total two elements lElectrical characteristics (Ta=25C) Parameter Symbol VZ Zener voltage Reverse current Junction capacitance IR Ct Limits 200 150 -55 to +150 Unit ｍＷ C C Min. 26.2 - Typ. - Max. 32.0 0.1 30 Unit V μＡ pF IZ=1mA Conditions VR=24V VR=0V , f=1MHz * Zener voltage (Vz) shall be measured at 40ms after loading current. Rating of per diode www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.6 (3) (2) 0.9MIN. 2 .0±0.2 各リードとも 0.25± 0.1 Each lead has same dimension 0.05 同寸法 0.05 RSB27K2 　 Data Sheet 10 apply voltage Ta=125°C ZENER CURRENT:Iz(mA) 1 ZENER CURRENT:Iz(mA) Ta=25°C 0.1 10 apply voltage 1 Ta=25°C 0.1 Ta=125°C Ta=75°C 0.01 Ta=-25°C 0.01 Ta=-25°C 0.001 Ta=75°C 0.001 25 26 27 28 29 30 31 32 33 34 35 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) 25 26 27 28 29 30 31 32 33 34 35 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2) 100 apply voltage 1000 apply voltage REVERSE CURRENT:IR (nA) Ta=125°C 1 Ta=75°C 0.1 REVERSE CURRENT:IR (nA) 10 100 Ta=125°C 10 1 Ta=75°C 0.01 Ta=25°C 0.1 Ta=25°C 0.001 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(1) 25 0.01 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(2) 25 100 apply voltage f=1MHz 100 apply voltage f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 1 2 3 4 10 1 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1) 1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RSB27K2 　 Data Sheet 31.0 30.9 30.8 ZENER VOLTAGE:Vz(Ｖ) 30.7 30.6 30.5 30.4 30.3 apply voltage 30.2 30.1 30.0 Vz DISPERSION MAP AVE:30.25V AVE:30.58V apply voltage Ta=25°C IZ=1mA n=30pcs REVERSE CURRENT:IR(nA) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 IR DISPERSION MAP apply voltage apply voltage AVE:0.74nA Ta=25°C VR=24V n=30pcs AVE:0.97nA 9 CAPACITANCE BETWEENTERMINALS:Ct(pF) 8.9 8.8 8.7 8.6 8.5 8.4 8.3 8.2 8.1 8 Ct DISPERSION MAP AVE：8.52pF apply voltage AVE：8.53pF apply voltage Ta=25°C f=1MHz VR=0V n=10pcs 1000 apply voltage DYNAMIC IMPEDANCE:Zz(Ω) 100 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) 10 1000 apply voltage 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE：Rth (°C/W) Rth(j-a) DYNAMIC IMPEDANCE:Zz(Ω) 100 Rth(j-c) 100 10 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) 10 1 0.001 0.01 1 10 TIME(s) Rth-t CHARACTERISTICS 0.1 100 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RSB27K2 　 Data Sheet 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD [kV] AVE:28.9kV ELECTROSTATIC DISCHARGE TEST ESD [kV] 30 No break at 30kV 25 20 20 15 15 AVE：9.0kV 10 apply voltage 5 10 AVE：6.0kV apply voltage 5 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP(1) ESD DISPERSION MAP(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A