RSB33V

Data Sheet Bi direction ESD Protection Diode RSB33V Applications ESD Protection Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 0.9MIN. Features 1)Small mold type. (UMD2) 2)High reliability. 3)Bi-directionality. 0.8MIN. 1.7±0.1 2.5±0.2 UMD2 Constructions Silicon epitaxial planer 0 .3±0.05 0.7±0.2 　　　 0.1 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation Pd Junction temperature Tj Storage temperature Tstg Limits 200 150 −55 to +150 Unit mW °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VZ Zener voltage Reverse current Junction capacitance IR Ct Min. 29.7 - Typ. - Max. 36.3 0.1 30 Unit V μA pF IZ=1mA Conditions VR=25V VR=0V , f=1MHz *Zener voltage (Vz)shall be measured at 40ms after loading current. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 1/4 2011.11 - Rev.A 2.8±0.1 2.1 RSB33V 　 Data Sheet 10 apply voltage 10 apply voltage Ta=150°C ZENER CURRENT:Iz(mA) 1 Ta=25°C Ta=150°C ZENER CURRENT:Iz(mA) 1 Ta=125°C Ta=25°C Ta=125°C 0.1 Ta=−25°C Ta=75°C 0.1 Ta=−25°C Ta=75°C 0.01 25 30 35 40 45 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(１) 0.01 25 30 35 40 45 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2) 1000 apply voltage 100 REVERSE CURRENT:IR (nA) Ta=150°C REVERSE CURRENT:IR (nA) 1000 Ta=150°C 100 10 10 Ta=125°C 1 Ta=125°C 1 Ta=75°C 0.1 Ta=75°C 0.1 Ta=25°C 0.01 apply voltage 0.01 Ta=25°C 0.001 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(1) 30 0.001 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(2) 25 30 100 apply voltage f=1MHz 100 apply voltage f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 5 10 15 20 25 10 1 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1) 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RSB33V 　 Data Sheet 40 38 36 ZENER VOLTAGE:Vz(V) 34 32 30 28 26 apply voltage 24 22 20 Vz DISPERSION MAP apply voltage AVE:32.73V AVE:34.52V Ta=25°C IZ=1mA n=30pcs REVERSE CURRENT:IR(nA) 10 9 8 7 6 5 4 AVE:1.38nA 3 2 1 0 IR DISPERSION MAP AVE:0.39nA apply voltage Ta=25°C VR=25V n=30pcs apply voltage 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 9 Ta=25°C f=1MHz VR=0V n=20pcs DYNAMIC IMPEDANCE:Zz(Ω) 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP AVE：9.07pF apply voltage AVE：8.86pF 10000 1000 100 apply voltage apply voltage 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) 10 1000 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE：Rth(°C/W) Rth(j-a) DYNAMIC IMPEDANCE:Zz(Ω) 100 100 Rth(j-c) 10 apply voltage 10 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) 10 1 0.001 0.01 0.1 1 10 100 1000 TIME(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RSB33V 　 Data Sheet 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD [kV] ELECTROSTATIC DISCHARGE TEST ESD [kV] AVE：26.5kV 20 30 No break at 30kV 25 20 15 AVE：6.3kV 10 apply voltage 15 AVE：8.9kV 10 apply voltage 5 5 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP(1) ESD DISPERSION MAP(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A