Data Sheet
Bi direction ESD Protection Diode
RSB39V
Applications ESD Protection Dimensions (Unit : mm)
1.25±0.1 0.1±0.1 0.05
Land size figure (Unit : mm)
Features 1)Small mold type. (UMD2) 2)High reliability. 3)Bi-directionality.
0.8MIN.
0.9MIN.
1.7±0.1
2.5±0.2
UMD2
Constructions Silicon epitaxial planer
0.3±0.05
0.7±0.2 0.1
Structure
ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory)
Taping dimensions (Unit : mm)
4 .0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1
3.5±0.05
1.75±0.1
8.0±0.2
1.40±0.1
4.0±0.1
φ1.05 1.0±0.1
Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation Pd Junction temperature Tj Storage temperature Tstg
Limits 200 150 −55 to +150
Unit mW °C °C
Electrical characteristics (Ta=25°C) Parameter Symbol VZ Zener voltage Reverse current Junction capacitance IR Ct
Min. 35.1 -
Typ. -
Max. 42.9 0.1 30
Unit V μA pF IZ=1mA
Conditions VR=30V VR=0V , f=1MHz
*Zener voltage (Vz)shall be measured at 40ms after loading current.
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2.75
1/4
2011.11 - Rev.A
2.8±0.1
2.1
RSB39V
Data Sheet
10 apply voltage Ta=150°C ZENER CURRENT:Iz(mA) ZENER CURRENT:Iz(mA) 1
10 apply voltage
1
Ta=150°C
Ta=125°C 0.1 Ta=25°C Ta=75°C
Ta=75°C 0.1 Ta=125°C Ta=25°C
Ta=−25°C 0.01 25 30 35
Ta=−25°C 0.01 40 45 25 30 35 40 45
ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1)
ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2)
10000 apply voltage 1000 REVERSE CURRENT:IR (nA) Ta=150°C REVERSE CURRENT:IR (nA)
10000 apply voltage 1000 Ta=150°C
100
100 Ta=125°C 10 Ta=75°C
10 Ta=125°C 1 Ta=75°C 0.1 Ta=25°C 0.01 0 10 20 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS(1) 30
1
0.1
Ta=25°C
0.01 0 10 20 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS(2) 30
100 f=1MHz
100 f=1MHz
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
apply voltage
apply voltage
1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1)
1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2)
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
RSB39V
Data Sheet
40 39 38 ZENER VOLTAGE:Vz(V) 37 36 35 34 33 apply voltage 32 31 30 Vz DISPERSION MAP apply voltage AVE:35.59V AVE:37.55V Ta=25°C IZ=1mA n=30pcs REVERSE CURRENT:IR(nA)
10 9 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP AVE:2.15nA AVE0.84nA apply voltage Ta=25°C VR=30V n=30pcs apply voltage
10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 9 8 7 6 5 4 3 apply voltage 2 1 0 Ct DISPERSION MAP apply voltage AVE:8.55pF AVE:8.53pF Ta=25°C f=1MHz VR=0V n=10pcs
100000 apply voltage DYNAMIC IMPEDANCE:Zz(Ω) 10000
1000
100
10
1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) 10
100000 apply voltage 10000 TRANSIENT THERMAL IMPEDANCE:Rth(°C/W)
1000 On glass-epoxy substrate Rth(j-a)
DYNAMIC IMPEDANCE:Zz(Ω)
100 Rth(j-c)
1000
100
10
10
1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) 10
1 0.001
0.01
1 10 100 TIME(s) Rth-t CHARACTERISTICS
0.1
1000
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A
RSB39V
Data Sheet
30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD [kV] AVE:25.5kV 20 ELECTROSTATIC DISCHARGE TEST ESD [kV]
30 No break at 30kV 25
20
15
15 AVE:6.9kV apply voltage
10
AVE:6.1kV apply voltage
10
5 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ
5 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ
0
0
ESD DISPERSION MAP(1)
ESD DISPERSION MAP(2)
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
R1120A
很抱歉,暂时无法提供与“RSB39V”相匹配的价格&库存,您可以联系我们找货
免费人工找货