RSB5.6SM

Data Sheet Bi direction ESD Protection Diode RSB5.6SM lApplications ESD Protection lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 0.80.05 0.120.05 lFeatures 1)Ultra small mold type. (EMD2) 2)Bi direction high reliability. 3)High reliability. 4)By chip-mounter,automatic mounting is possible. 0.6 1.20.05 1.60.1 EMD2 lConstruction Silicon epitaxial planar 0.30.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) dot (productNo.) lStructure 0.60.1 lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Symbol Peak pulse power(tp=10×1000μs) Ppk Power dissipation P Junction temperature Tj Storage temperature Tstg Operation temperature range Topor lElectrical characteristics (Ta=25C) Parameter Symbol Vz Zener voltage Reverse current Capacitance between terminals IR Ct Limits 10 150 150 -55 to +150 -55 to +150 Unit W mW C C C Min. 4.76 - Typ. 50.0 Max. 6.44 1.0 - Unit V μA pF IZ=1mA Conditions VR=2.5V VR=0V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.7 RSB5.6SM 　 Data Sheet 10 apply voltage Ta=125°C ZENER CURRENT:Iz(mA) ZENER CURRENT:Iz(mA) 1 10 apply voltage 1 Ta=125°C Ta=75°C 0.1 Ta=25°C 0.1 Ta=75°C Ta=25°C 0.01 Ta=-25°C 0.01 Ta=-25°C 0.001 2 3 4 5 6 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) 0.001 2 3 4 5 6 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2) 10000 apply voltage 1000 REVERSE CURRENT:IR (nA) 100 10 1 0.1 0.01 0.001 0.0001 0 1 2 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(1) 3 Ta=25°C Ta=75°C Ta=125°C REVERSE CURRENT:IR (nA) 10000 apply voltage 1000 100 10 1 0.1 Ta=25°C 0.01 0.001 0.0001 0 1 2 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(2) 3 Ta=125°C Ta=75°C 100 f=1MHz 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) apply voltage CAPACITANCE BETWEEN TERMINALS:Ct(pF) apply voltage 10 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1) 10 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RSB5.6SM 　 Data Sheet 6.0 Ta=25°C IZ=1mA n=30pcs ZENER VOLTAGE:Vz(Ｖ) 5.5 REVERSE CURRENT:IR(nA) 120 Ta=25°C VR=2.5V n=30pcs 110 AVE:114.0nA 100 AVE:5.437V 5.0 AVE:5.486V 90 AVE:96.0nA apply voltage 80 apply voltage 4.5 apply voltage apply voltage 4.0 Vz DISPERSION MAP 70 IR DISPERSION MAP 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 90 80 70 60 50 AVE：53.70pF 40 30 apply voltage 20 10 0 Ct DISPERSION MAP apply voltage AVE：51.38pF Ta=25°C f=1MHz VR=0V n=10pcs 10000 DYNAMIC IMPEDANCE:Zz(Ω) 1000 100 apply voltage 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) 10 10000 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE：Rth (°C/W) Rth(j-a) DYNAMIC IMPEDANCE:Zz(Ω) 1000 Rth(j-c) 100 100 apply voltage 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) 10 10 0.001 0.01 0.1 1 10 100 1000 TIME(s) Rth-ｔ CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RSB5.6SM 　 Data Sheet 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD [kV] ELECTROSTATIC DISCHARGE TEST ESD [kV] 30 No break at 30kV 25 20 20 15 AVE：10.0kV 10 apply voltage 15 AVE：9.35kV 10 apply voltage 5 5 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP(1) ESD DISPERSION MAP(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A