RSB6.8CS

ESD Protection diode RSB6.8CS Application ESD Protection, bi direction Dimensions (Unit : mm) Land size figure (Unit : mm) 0.55 VMN2 Construction Silicon epitaxial planar Structure Taping specifications(Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Peak pulse power (tp=10×1000us) Ppk Power dissipation P Junction temperature Tj Storage temperature Tstg Operating temperature Topor Electrical characteristics (Ta=25°C) Parameter Symbol Vz Zener voltage Reverse current IR Capacitance between terminals Ct Limits 10 100 150 -55 to +150 -55 to +150 Unit W mW °C °C °C 0.45 Features 1) Ultra small mold type. (VMN2) 2) High reliability. 3) Bi chip-mounter, automatic mounting is possible. 0.45 Min. 5.78 - Typ. 15 Max. 7.82 0.5 - Unit V µA pF Conditions IZ=1mA VR=3.5V VR=0V , f=1MHz www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.A 0.5 RSB6.8CS Electrical characteristics curves 　 Data Sheet 1 10000 1000 REVERSE CURRENT : IR (nA) Ta=150°C Ta=125°C 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 3.5 ZENER CURRENT : Iz(mA) 100 10 1 0.1 0.01 0.001 0.0001 Ta=-25°C Ta=75°C Ta=25°C 0.1 0.01 10 0.001 Ta=150°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 4 5 6 7 8 9 0.0001 0 1 2 3 ZENER VOLTAGE : Vz(mV) Vz-Iz CHARACTERISTICS 0.00001 0 0.5 1 1.5 2 2.5 3 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1 0 0.5 1 1.5 2 2.5 3 3.5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 6.9 Ta=25° C Iz=1mA n=30pcs 10 9 REVERSE CURRENT : IR(nA) 8 7 6 5 4 3 2 1 0 Vz DISRESION MAP AVE:0.9344n A Ta=25° C VR=3.5V n=30pcs CAPACITANCE BETWEENTERMINALS : Ct(pF) 50 45 40 35 30 25 20 15 10 5 0 Ct DISRESION MAP AVE:14.95pF Ta=25° C f=1MHz VR=0V n=10pcs ZENER VOLTAGE : Vz(Ｖ) 6.8 6.7 6.6 6.5 AVE:6.693V 6.4 IR DISRESION MAP 1000 TRANSIENT THAERMAL IMPEDANCE : Rth (° C/W) Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA IF=100mA 1ms time 300 10 0.001 0.01 1 10 100 TIME : t(s) Rth-t CHARACTERISTICS 0.1 1000 www.rohm.com ©2009 ROHM Co., Ltd. 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