RSB6.8ZS

RSB6.8ZS

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    RSB6.8ZS - Bi direction ESD Protection Diode - Rohm

  • 数据手册
  • 价格&库存
RSB6.8ZS 数据手册
Data Sheet Bi direction ESD Protection Diode RSB6.8ZS Applications ESD Protection Dimensions (Unit : mm) Features 1)Ultra small mold type.(GMD2) 2)Bi-directionality. 3)High reliability. 4)By chip-mounter,automatic mounting is possible. 0~0.03 0.19±0.03 8 0.3±0.06 0.38±0.03 0.6±0.05 0.27±0.03 0.27±0.03 ROHM : GMD2 JEDEC : JEITA : dot(year week factory) Land size figure (Unit : mm) 0.23 Constructions Silicon epitaxial planer 0.31 0.38 Structure GMD2 Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg Operation temperature range Topor Limits 100 150 −55 to +150 −55 to +150 Unit mW °C °C °C Electrical characteristics (Ta=25°C) Parameter Symbol Vz Zener voltage Reverse current IR Min. 5.78 - Typ. - Max. 7.82 0.5 Unit V μA Conditions IZ=1mA VR=3.5V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RSB6.8ZS   Data Sheet 10 apply voltage 10 apply voltage ZENER CURRENT:Iz(mA) 0.1 Ta=125°C 0.01 Ta=75°C Ta=25°C Ta=−25°C 0.001 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) ZENER CURRENT:Iz(mA) 1 1 0.1 Ta=125°C 0.01 Ta=75°C Ta=25°C Ta=−25°C 0.001 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2) 100000 apply voltage 10000 REVERSE CURRENT:IR (pA) Ta=125°C 1000 100000 apply voltage 10000 REVERSE CURRENT:IR (pA) Ta=125°C 1000 Ta=75°C 100 100 10 Ta=75°C 10 Ta=25°C 1 Ta=25°C 0.1 1 0.1 0.01 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS(1) 5 0.01 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS(2) 5 10 f=1MHz 10 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) apply voltage apply voltage 1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1) 1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RSB6.8ZS   Data Sheet 7.2 7.2 7.1 ZENER VOLTAGE:Vz(V) 7.1 AVE:6.93V 7.0 7.0 6.9 6.9 6.8 6.8 6.7 Vz DISPERSION MAP apply voltage apply voltage AVE:7.04V Ta=25°C IZ=1mA n=30pcs REVERSE CURRENT:IR(pA) 100 95 90 85 80 AVE:88.9pA 75 AVE:63.2pA 70 65 apply voltage 60 55 50 IR DISPERSION MAP Ta=25°C VR=3.5V n=30pcs 8 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 7 6 5 4 3 2 1 0 Ct DISPERSION MAP apply voltage AVE:6.17pF AVE:6.19pF DYNAMIC IMPEDANCE:Zz(Ω) 1000 100 10 apply voltage Ta=25°C f=1MHz VR=0V n=10pcs 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) 10 1000 1000 On glass-epoxy substrate Rth(j-a) TRANSIENT THERMAL IMPEDANCE:Rth(°C/W) DYNAMIC IMPEDANCE:Zz(Ω) 100 Rth(j-c) 100 10 apply voltage 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) 10 10 0.001 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RSB6.8ZS   Data Sheet 30 30 AVE:29.1kV 25 ELECTROSTATIC DISCHARGE TEST ESD [kV] ELECTROSTATIC DISCHARGE TEST ESD [kV] AVE:27.9kV 25 20 20 AVE:22.2kV 15 AVE:15.1kV 10 apply voltage 5 AVE:2.0kV 15 10 apply voltage 5 AVE:2.0kV 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP(1) ESD DISPERSION MAP(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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