Data Sheet
Bi direction ESD Protection Diode
RSB6.8ZS
Applications ESD Protection Dimensions (Unit : mm)
Features 1)Ultra small mold type.(GMD2) 2)Bi-directionality. 3)High reliability. 4)By chip-mounter,automatic mounting is possible.
0~0.03
0.19±0.03
8
0.3±0.06
0.38±0.03
0.6±0.05
0.27±0.03
0.27±0.03
ROHM : GMD2 JEDEC : JEITA : dot(year week factory)
Land size figure (Unit : mm) 0.23 Constructions Silicon epitaxial planer 0.31 0.38
Structure
GMD2
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg Operation temperature range Topor
Limits 100 150 −55 to +150 −55 to +150
Unit mW °C °C °C
Electrical characteristics (Ta=25°C) Parameter Symbol Vz Zener voltage Reverse current IR
Min. 5.78 -
Typ. -
Max. 7.82 0.5
Unit V μA
Conditions IZ=1mA VR=3.5V
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1/4
2011.11 - Rev.A
RSB6.8ZS
Data Sheet
10 apply voltage
10 apply voltage
ZENER CURRENT:Iz(mA)
0.1 Ta=125°C 0.01 Ta=75°C Ta=25°C Ta=−25°C 0.001 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1)
ZENER CURRENT:Iz(mA)
1
1
0.1
Ta=125°C 0.01
Ta=75°C Ta=25°C Ta=−25°C
0.001 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2)
100000 apply voltage 10000 REVERSE CURRENT:IR (pA) Ta=125°C 1000
100000 apply voltage 10000 REVERSE CURRENT:IR (pA) Ta=125°C 1000 Ta=75°C
100
100
10
Ta=75°C
10 Ta=25°C
1 Ta=25°C 0.1
1
0.1
0.01 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS(1) 5
0.01 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS(2) 5
10 f=1MHz
10 f=1MHz
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
apply voltage
apply voltage
1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1)
1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2)
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2/4
2011.11 - Rev.A
RSB6.8ZS
Data Sheet
7.2 7.2 7.1 ZENER VOLTAGE:Vz(V) 7.1 AVE:6.93V 7.0 7.0 6.9 6.9 6.8 6.8 6.7 Vz DISPERSION MAP apply voltage apply voltage AVE:7.04V Ta=25°C IZ=1mA n=30pcs REVERSE CURRENT:IR(pA)
100 95 90 85 80 AVE:88.9pA 75 AVE:63.2pA 70 65 apply voltage 60 55 50 IR DISPERSION MAP Ta=25°C VR=3.5V n=30pcs
8 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 7 6 5 4 3 2 1 0 Ct DISPERSION MAP apply voltage AVE:6.17pF AVE:6.19pF DYNAMIC IMPEDANCE:Zz(Ω)
1000
100
10 apply voltage
Ta=25°C f=1MHz VR=0V n=10pcs
1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) 10
1000
1000 On glass-epoxy substrate Rth(j-a) TRANSIENT THERMAL IMPEDANCE:Rth(°C/W)
DYNAMIC IMPEDANCE:Zz(Ω)
100
Rth(j-c) 100
10 apply voltage
1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) 10
10 0.001
0.01
1 10 TIME:t(s) Rth-t CHARACTERISTICS
0.1
100
1000
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3/4
2011.11 - Rev.A
RSB6.8ZS
Data Sheet
30
30 AVE:29.1kV
25 ELECTROSTATIC DISCHARGE TEST ESD [kV]
ELECTROSTATIC DISCHARGE TEST ESD [kV]
AVE:27.9kV
25
20
20
AVE:22.2kV
15 AVE:15.1kV 10 apply voltage 5 AVE:2.0kV
15
10 apply voltage 5 AVE:2.0kV
0
C=200pF R=0Ω
C=150pF R=330Ω
C=100pF R=1.5kΩ
0
C=200pF R=0Ω
C=150pF R=330Ω
C=100pF R=1.5kΩ
ESD DISPERSION MAP(1)
ESD DISPERSION MAP(2)
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4/4
2011.11 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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