RSD050N06

Data Sheet 4V Drive Nch MOSFET RSD050N06 Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications Switching 0.9 0.75 0.65 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. Packaging specifications Type Package Code Basic ordering unit (pieces) CPT3 TL 2500  Inner circuit ∗1 (1) Gate (2) Drain (3) Source ∗2 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Tc=25°C Symbol VDSS VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2 Limits 60 20 5.0 15 5.0 15 15 150 55 to +150 Unit V V A A A A W °C °C 1 ESD Protection Diode 2 Body Diode (1) (2) (3) Continuous Pulsed Continuous Pulsed Thermal resistance Parameter Channel to Case * T c=25C Symbol Rth (ch-c) * Limits 8.33 Unit °C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.02 - Rev.A 2.5 1.5 0.5 1.0 9.5 RSD050N06 Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 60 1.0 3.5 Typ. 78 94 100 290 90 35 8 17 26 8 8.0 1.4 1.4 Max. 10 1 3.0 109 131 140 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=5.0A, VGS=10V m ID=5.0A, VGS=4.5V ID=5.0A, VGS=4.0V ID=5.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 30V VGS=10V RL=12 RG=10 VDD 30V ID=5.0A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=5.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.02 - Rev.A RSD050N06 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 15.0 Ta=25°C pulsed 12.5 VGS=10.0V Drain Current : ID [A] 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 15.0 Ta=25°C pulsed 12.5 VGS=10.0V VGS=4.5V Drain Current : ID [A] 10.0 VGS=4.0V 10.0 VGS=4.5V VGS=4.0V 7.5 VGS=3.0V 7.5 VGS=3.5V 5.0 5.0 2.5 2.5 VGS=3.0V 0.0 0 0.2 0.4 0.6 0.8 1 0.0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain-Source Voltage : VDS [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.0V VGS=4.5V VGS=10V 100 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.01 0.1 1 10 1 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.0V pulsed 100 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 10 1 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.02 - Rev.A RSD050N06 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 1 Forward Transfer Admittance Yfs [S] 10 VDS=10V pulsed Fig.8 Typical Transfer Characteristics Drain Currnt : ID [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.001 0.0001 0.01 0.01 0.00001 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fif.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed 1 Source Current : Is [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 Ta=25°C pulsed ID=2.5A 0.1 500 ID=5.0A 0.01 0.001 0.0001 0.0 0.5 Source-Drain Voltage : VSD [V] 1.0 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 1000 VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed 12 Ta=25°C VDD=30V ID=5A Pulsed Fig.12 Dynamic Input Characteristics 10 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 100 8 td(off) td(on) 6 10 4 2 tr 1 0.01 0.1 1 10 0 0 2 4 6 8 10 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.02 - Rev.A RSD050N06 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C f=1MHz VGS=0V 10 Drain Current : ID [ A ] Capacitance : C [pF] 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) （ VGS = 10V ） Ciss 100 PW = 100μs 1 PW = 1ms 0.1 Tc=25°C Single Pulse 0.01 PW = 10ms DC Operation Coss Crss 10 0.01 0.1 1 10 100 0.1 1 10 100 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Tc=25°C Single Pulse Rth(ch-a)=8.33°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.02 - Rev.A RSD050N06  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A