RSD050N10

4V Drive Nch MOSFET RSD050N10 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications Switching 0.9 0.75 0.65 Packaging specifications Type Package Code Basic ordering unit (pieces) CPT3 TL 2500 Inner circuit ∗1 (1) Gate (2) Drain (3) Source ∗2 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw≦10s, Duty cycle≦1% *2 T c=25°C Symbol VDSS VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2 Limits 100 20 5.0 20 5.0 20 15 150 55 to +150 Unit V V A A A A W °C °C *1 ESD Protection Diode *2 Body Diode (1) (2) (3) Continuous Pulsed Continuous Pulsed Thermal resistance Parameter Channel to Case * T c=25C Symbol Rth (ch-c) * Limits 8.33 Unit °C / W www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/6 2012.02 - Rev.B 2.5 1.5 0.5 1.0 9.5 RSD050N10 Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 100 1.0 2.5 Typ. 135 142 145 530 50 30 10 15 45 15 14 1.7 3.0 Max. ±10 10 2.5 190 200 205 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=100V, VGS=0V VDS=10V, ID=1mA ID=5.0A, VGS=10V m ID=5.0A, VGS=4.5V ID=5.0A, VGS=4.0V ID=5.0A, VDS=10V VDS=25V VGS=0V f=1MHz ID=2.5A, VDD VGS=10V RL=20 RG=10 VDD 50V ID=5.0A, VGS=10V 50V DataSheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=5.0A, VGS=0V www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/6 2012.02 - Rev.B RSD050N10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 5 VGS=10.0V 4 VGS=4.0V 　 DataSheet Fig.2 Typical Output Characteristics (Ⅱ) 5 VGS=10.0V 4 Drain Current : ID [A] VGS=4.0V VGS=3.0V VGS=2.5V VGS=3.0V Drain Current : ID [A] 3 VGS=2.5V 3 2 2 1 Ta=25°C pulsed 0 0 0.2 0.4 0.6 0.8 1 1 Ta=25°C pulsed 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed 10000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.0V VGS=4.5V VGS=10V 100 100 0.01 0.1 1 10 10 0.01 0.1 1 Drain Current : ID [A] 10 Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.5V pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] 10000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VGS=4V pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta=-25°C 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/6 2012.02 - Rev.B RSD050N10 　 DataSheet Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 10 100 VDS=10V pulsed VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] Drain Currnt : ID [A] 1 Ta=125°C Ta=75°C 0.1 Ta=25°C Ta=-25°C Ta=125°C 1 Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.01 0.001 0.1 Drain Current : ID [A] 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Source Current : Is [A] 1 Ta=25°C Ta=-25°C 400 500 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Ta=25°C pulsed 300 ID=5.0A ID=2.5A 200 0.1 100 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 10000 VDD≒50V VGS=10V RG=10Ω Ta=25°C Pulsed tf Switching Time : t [ns] td(off) 100 10 Ta=25°C VDD=50V ID=5A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : VGS [V] 1000 6 4 td(on) 10 tr 2 1 0.01 0.1 Drain Current : ID [A] 1 10 0 0 5 10 15 20 Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/6 2012.02 - Rev.B RSD050N10 　 DataSheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V 1000 Drain Current : ID [ A ] Capacitance : C [pF] 10 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) Ciss 100 Coss PW = 100μs 1 PW = 1ms 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. （30mm × 30mm × 0.8mm) 0.1 1 10 PW = 10ms DC Operation 10 Crss 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 0.01 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Tc=25°C Single Pulse Rth(ch-a)=8.33°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 1 Normalized Transient Thermal Resistance : r（t） 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/6 2012.02 - Rev.B RSD050N10 Measurement circuits 　 DataSheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% RG VDD td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL VDS VGS Qg IG(Const.) D.U.T. VDD Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/6 2012.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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