RSD080N06

Data Sheet 4V Drive Nch MOSFET RSD080N06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 0.9 2.3 (1) (2) (3) 2.3 0.8Min. Features 1) Low on-resistance. 2) 4V drive. 3) High power package(CPT3). 0.65 0.5 1.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RSD080N06 Type Taping TL 2500   Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 TC=25C Limits 60 20 8 16 8 16 15 150 55 to 150 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2  Thermal resistance Parameter Channel to Case * T C=25C Symbol Rth (ch-c)* Limits 8.33 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A 2.5 0.75 0.9 1.5 9.5 RSD080N06  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 60 1.0 4.8 Typ. 57 70 78 380 90 50 9 13 30 10 9.4 1.8 2.3 Max. 10 1 2.5 80 98 109 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=8A, VGS=10V m ID=8A, VGS=4.5V ID=8A, VGS=4.0V VDS=10V, ID=8A VDS=10V VGS=0V f=1MHz VDD 30V, ID=4A VGS=10V RL=7.5 RG=10 VDD 30V, ID=8A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=8A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RSD080N06 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 8 Ta=25°C pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 8 Ta=25°C pulsed VGS=10.0V 6 Drain Current : ID [A] VGS=4.5V VGS=10.0V 6 Drain Current : ID [A] VGS=4.5V VGS=4.0V VGS=4.0V 4 4 VGS=3.0V 2 VGS=3.0V 2 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed VGS=4.0V VGS=4.5V VGS=10V 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RSD080N06 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] 10 Drain Currnt : ID [A] 100 Fig.8 Typical Transfer Characteristics VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.1 0.01 0.01 0.01 0.001 0.1 1 Drain Current : ID [A] 10 100 0.0 1.0 2.0 3.0 4.0 5.0 Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 300 Ta=25°C pulsed 250 ID=8.0A 200 ID=4.0A 150 10 Source Current : Is [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 100 0.1 50 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 10000 VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed tf td(off) 100 10 Ta=25°C VDD=30V ID=8A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : VGS [V] 1000 Switching Time : t [ns] 6 4 tr 10 2 td(on) 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 2 4 6 8 10 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RSD080N06 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V 1000 Drain Current : ID [ A ] Capacitance : C [pF] 10 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs Ciss 100 1 PW = 1ms 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.01 PW = 10ms Crss 10 Coss 1 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=47.4°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RSD080N06  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A