RSD080P05TL

Data Sheet 4V Drive Pch MOSFET RSD080P05 Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) CPT3 6.5 5.1 or (SC-63) 2.3 0.65 0.9 (1)  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD080P05 Unit V V A *1 16 8.0 A A ISP *1 PD *2 16 15 A W 150 55 to 150 C C Limits 8.33 Unit C / W Gate-source voltage Continuous VGSS ID Pulsed Continuous IDP IS Pulsed R ot 1.5 0.5 1.0 ∗2 45 20 8.0 VDSS Tch Tstg (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE N Channel temperature Range of storage temperature 2.3 ∗1 Limits Drain-source voltage Power dissipation (3)  Inner circuit  Absolute maximum ratings (Ta = 25C) Symbol Parameter Source current (Body Diode) (2) Taping TL 2500 ○ (1) Gate (2) Drain (3) Source Drain current 2.3 2.5 0.75 0.8Min. 0.9 e N co ew m m D es en ig de ns d f  Application Switching 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 9.5 1.5 0.5 *1 Pw≦10s, Duty cycle≦1% *2 Tc=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) * * T c=25C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A Data Sheet 　 RSD080P05  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Gate threshold voltage VGS=20V, VDS=0V 45 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=45V, VGS=0V VGS (th) 1.0 - 3.0 V - 65 91 ID=8.0A, VGS=10V m ID=8.0A, VGS=4.5V Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Conditions VDS=10V, ID=1mA * RDS (on) - 95 133 - 105 147 Forward transfer admittance l Yfs l* 6.0 - - S ID=8.0A, VDS=10V Ciss - 1000 - pF VDS=10V ID=8.0A, VGS=4.0V e N co ew m m D es en ig de ns d f Input capacitance or Static drain-source on-state resistance Output capacitance Coss - 160 - pF VGS=0V Reverse transfer capacitance Crss - 80 - pF f=1MHz Turn-on delay time td(on) * - 12 - ns ID=4.0A, VDD 25V tr * - 15 - ns VGS=10V td(off) * - 50 - ns RL=6.25 tf * - 20 - ns RG=10 Total gate charge Qg * - 9.0 - nC VDD 25V Gate-source charge Qgs * Gate-drain charge Qgd * - 4.0 3.0 - nC nC ID=8.0A, VGS=5V Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Min. Typ. Max. Unit - - 1.2 V Conditions Is=8.0A, VGS=0V N ot R *Pulsed Symbol VSD * www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Data Sheet 　 RSD080P05 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 8 8 Ta=25°C pulsed VGS=-3.2V VGS=-3.6V VGS=-4.5V 6 VGS=-4.0V 5 VGS=-3.2V 4 VGS=-4.5V VGS=-4.0V 4 VGS=-3.6V 3 VGS=-2.8V e N co ew m m D es en ig de ns d f 3 VGS=-10.0V 5 or 6 Drain Current : -ID [A] 7 VGS=-10.0V Drain Current : -ID [A] 7 2 2 VGS=-2.8V 1 1 0 0 0.2 0.4 0.6 0.8 0 1 0 2 Drain-Source Voltage : -VDS [V] VGS=-10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 10 0.001 0.01 0.1 1 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.001 10 0.01 Drain Current : -ID [A] 10 R 1000 VGS=-4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] N ot 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.01 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VGS=-4.5V pulsed 1 0.001 0.1 Drain Current : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Static Drain-Source On-State Resistance RDS(on) [mΩ] 10 1000 VGS=-4.0V VGS=-4.5V VGS=-10V 1000 8 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Ta=25°C pulsed 100 6 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 4 Ta=25°C pulsed 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.001 10 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 0.01 0.1 1 10 Drain Current : -ID [A] 3/6 2011.08 - Rev.A Data Sheet 　 RSD080P05 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 10 VDS=-10V pulsed VDS=-10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C or Drain Currnt : -ID [A] 1 0.1 0.1 0.01 0.001 e N co ew m m D es en ig de ns d f Forward Transfer Admittance Yfs [S] 1 0.0001 0.01 0.001 0.01 0.1 1 0.00001 10 0.0 0.5 1.0 3.0 3.5 4.0 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.0 Ta=25°C pulsed 350 Static Drain-Source On-State Resistance RDS(on) [mΩ] Source Current : -Is [A] VGS=0V pulsed 0.5 1.0 300 ID=-8.0A 200 150 100 50 0 1.5 ID=-4.0A 250 0 2 4 Source-Drain Voltage : -VSD [V] R td(off) 100 td(on) 10 tr 0.01 0.1 12 14 16 18 20 Ta=25°C VDD=-25V ID=-8A Pulsed 8 6 4 2 1 0 10 0 5 10 15 20 25 Total Gate Charge : -Qg [nC] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 Fig.12 Dynamic Input Characteristics VDD≒-25V VGS=-10V RG=10Ω Ta=25°C Pulsed tf 8 10 Gate-Source Voltage : -VGS [V] N ot 1000 6 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics Switching Time : t [ns] 2.5 400 10 1 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage 0.01 1.5 Gate-Source Voltage : -VGS [V] Drain Current : -ID [A] 4/6 2011.08 - Rev.A Data Sheet 　 RSD080P05 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 100000 100 10000 10 Ciss 1000 Coss 100 10 1 0.01 PW = 1ms 1 PW = 10ms DC Operation e N co ew m m D es en ig de ns d f Crss PW = 100μs or Drain Current : -ID [ A ] Capacitance : C [pF] Operation in this area is limited by RDS(on) (VGS = -10V ) Ta=25°C f=1MHz VGS=0V 0.1 1 10 0.1 0.01 100 Tc=25°C Single Pulse 0.1 1 10 100 Drain-Source Voltage : -VDS [ V ] Drain-Source Voltage : -VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Tc=25°C Single Pulse 1 0.1 Rth(ch-c)=8.33°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 N ot R Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A Data Sheet 　 RSD080P05  Measurement circuits Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL 10% VDD RG VDS 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms e N co ew m m D es en ig de ns d f Fig.1-1 Switching Time Measurement Circuit 10% or D.U.T. VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform N ot R Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice N ot R e N co ew m m D es en ig de ns d fo r Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 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