RSD100N10

Data Sheet 4V Drive Nch MOSFET RSD100N10  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 2.3 (1) (2) (3) 2.3 0.8Min. Features 1) Low on-resistance. 2) 4V drive. 3) High power package. 5.5 1.5 0.65 0.5 1.0  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD100N10 Taping TL 2500   Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 PW 10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA. Limits 100 20 Unit V V A A A A W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *3 *1 *3 *1 *2 10 20 10 20 20 150 55 to 150  Thermal resistance Parameter Channel to Case * T C=25°C Symbol Rth (ch-c)* Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.06 - Rev.A 2.5 0.75 0.9 1.5 9.5 RSD100N10  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 100 1 4.5 Typ. 95 100 105 700 65 40 10 17 50 20 18 2 4.5 Max. 10 1 2.5 133 140 147 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=100V, VGS=0V VDS=10V, ID=1mA ID=5A, VGS=10V m  ID=5A, VGS=4.5V ID=5A, VGS=4V VDS=10V, ID=5A VDS=25V VGS=0V f=1MHz VDD 50V, I D=5A VGS=10V RL=10 RG=10 VDD 50V, I D=10A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=10A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A RSD100N10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics ( Ⅰ) 10 Ta=25°C pulsed 8 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 10 VGS=2.8V Ta=25°C pulsed VGS=10.0V VGS=4.5V VGS=4.0V Drain Current : ID [A] 8 VGS=10.0V VGS=4.5V VGS=4.0V Drain Current : ID [A] 6 VGS=2.8V 6 VGS=2.5V 4 VGS=2.5V 4 2 2 VGS=2.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 VGS=2.0V 8 10 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS=4.0V VGS=4.5V VGS=10V 100 100 10 0.01 0.1 1 Drain Current : ID [A] 10 100 10 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 0.01 0.1 1 Drain Current : ID [A] 10 100 10 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.06 - Rev.A RSD100N10 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Drain Currnt : ID [A] 100 VDS=10V pulsed Fig.8 Typical Transfer Characteristics 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.01 0.001 0.1 1 Drain Current : ID [A] 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 250 Ta=25°C pulsed 200 ID=10A ID=5A 150 10 Source Current : Is [A] 1 100 0.1 50 0.01 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics 10000 VDD≒50V VGS=10V RG=10Ω Ta=25°C Pulsed 10 Ta=25°C VDD=50V ID=10A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : VGS [V] 1000 Switching Time : t [ns] tf 6 100 td(off) 4 td(on) 10 tr 2 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0 2 4 6 8 10 12 14 16 18 20 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.06 - Rev.A RSD100N10 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Normalized Transient Thermal Resistance : r（t） Ta=25°C f=1MHz VGS=0V Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Ta=25°C Single Pulse 1 Capacitance : C [pF] 1000 Ciss 0.1 0.01 100 Coss Crss 10 0.01 0.1 1 10 100 1000 0.001 Mounted on a recommended land. (20mm × 20mm × 0.8mm) Rth(ch-a)=111.7°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Pulse width : Pw (s) Fig.15 Maximum Safe Operating Area 100 Operation in this area is limited by RDS(on) (VGS = 10V) 10 Drain Current : ID [ A ] PW = 100μs 1 PW = 1ms 0.1 TC=25°C Single Pulse 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] PW = 10ms DC Operation www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.06 - Rev.A RSD100N10  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A