RSD150N06

Data Sheet 4V Drive Nch MOSFET RSD150N06 Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Applications Switching 5.5 1.5 0.9 0.75 0.65 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. Packaging specifications Type Package Code Basic ordering unit (pieces) CPT3 TL 2500  Inner circuit ∗1 (1) Gate (2) Drain (3) Source ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Tc=25°C Limits 60 20 15 30 15 30 20 150 55 to +150 Unit V V A A A A W C C 1 ESD Protection Diode 2 Body Diode (1) (2) (3) VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2 Thermal resistance Parameter Channel to Case * T c=25C Symbol Rth (ch-c) * Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.02 - Rev.A 2.5 1.5 0.5 1.0 9.5 RSD150N06 Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 60 1.0 7 Typ. 28 33 36 930 200 80 10 30 45 15 18.0 3.2 3.8 Max. 10 1 3.0 40 47 51 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=15A, VGS=10V m ID=15A, VGS=4.5V ID=15A, VGS=4.0V ID=15A, VDS=10V VDS=10V VGS=0V f=1MHz ID=7.5A, VDD 30V VGS=10V RL=4.0 RG=10 VDD 30V ID=15A, VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=15A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.02 - Rev.A RSD150N06 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 30 Ta=25°C pulsed VGS=10.0V 20 Drain Current : ID [A] VGS=4.5V VGS=4.0V 15 VGS=3.6V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 30 VGS=10.0V 25 VGS=4.5V VGS=4.0V 20 Drain Current : ID [A] VGS=3.6V 25 15 VGS=3.0V 10 VGS=3.0V 5 VGS=2.8V 10 5 VGS=2.8V 0 0 Ta=25°C pulsed 0 1 2 3 4 5 6 7 8 9 10 -5 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] -5 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C pulsed VGS=4.0V VGS=4.5V VGS=10V 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 10 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.02 - Rev.A RSD150N06 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed VDS=10V pulsed 10 Fig.8 Typical Transfer Characteristics 100 Forward Transfer Admittance Yfs [S] 10 Drain Currnt : ID [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.1 0.0001 0.01 0.01 0.00001 0.1 1 Drain Current : ID [A] 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 Ta=25°C pulsed 10 Source Current : Is [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 100 ID=7.5A ID=15.0A 0.1 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 10000 VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 14 Ta=25°C VDD=30V ID=15A Pulsed Fig.12 Dynamic Input Characteristics 12 tf Gate-Source Voltage : VGS [V] 1000 Switching Time : t [ns] 10 8 100 6 td(on) 10 tr 4 2 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0 5 10 15 20 25 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.02 - Rev.A RSD150N06 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V 1000 Drain Current : ID [ A ] Capacitance : C [pF] 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) Ciss 10 PW = 100μs Coss 100 1 PW = 1ms Crss 10 PW = 10ms 0.1 DC Operation Tc=25°C Single Pulse 1 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r(t) Tc=25°C Single Pulse Rth(ch-c)=6.25°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.02 - Rev.A RSD150N06  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A