RSD160P05

Data Sheet 4V Drive Pch MOSFET RSD160P05 Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.  Application Switching 5.5 0.9 0.75 0.65 0.9 (1) 2.3 (2) (3) 2.3 0.8Min.  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD160P05 Taping TL 2500 ○  Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg *1 Limits 45 20 16 32 16 32 20 150 55 to 150 Unit V V A A A A W C C *1 *2 Power dissipation Channel temperature Range of storage temperature *1 Pw≤10s, Duty cycle≤1% *2 Tc=25C  Thermal resistance Parameter Channel to Case * T c=25C Symbol Rth (ch-c) * Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A 2.5 1.5 0.5 1.0 9.5 RSD160P05 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 45 1.0 8.0 Typ. 35 45 50 2000 250 140 13 22 90 50 16.0 5.2 5.0 Max. 10 1 3.0 50 63 70 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=45V, VGS=0V VDS=10V, ID=1mA ID=16A, VGS=10V m  ID=8A, VGS=4.5V ID=8A, VGS=4.0V ID=8A, VDS=10V VDS=10V VGS=0V f=1MHz ID=8.0A, VDD 25V VGS=10V RL=3.1 RG=10 VDD 25V ID=16A, VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=16A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RSD160P05 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 16 VGS=-10.0V 14 12 Drain Current : -ID [A] 10 8 VGS=-3.0V 6 4 2 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] VGS=-2.8V VGS=-4.5V VGS=-4.0V VGS=-3.2V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 8 VGS=-10.0V 7 6 Drain Current : -ID [A] 5 VGS=-2.8V 4 3 2 1 VGS=-2.5V 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Ta=25°C pulsed VGS=-4.0V VGS=-3.0V VGS=-3.8V Ta=25°C pulsed Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 100 10 VGS=-4.0V VGS=-4.5V VGS=-10V 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4V pulsed 100 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RSD160P05 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=-10V pulsed 10 Forward Transfer Admittance Yfs [S] 100 Fig.8 Typical Transfer Characteristics VDS=-10V pulsed 1 Drain Currnt : -ID [A] 10 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.001 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.0001 0.1 0.01 0.00001 0.1 1 Drain Current : -ID [A] 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : -VGS [V] FIg.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 500 Ta=25°C pulsed 400 10 Source Current : -Is [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] 300 ID=-16.0A 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 200 ID=-8.0A 100 0.1 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : -VSD [V] 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics 10000 VDD≒-25V VGS=-10V RG=10Ω Ta=25°C Pulsed 10 Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : -VGS [V] Ta=25°C VDD=-25V ID=-16A Pulsed Switching Time : t [ns] 1000 tf 6 td(off) 100 td(on) 10 tr 4 2 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 0 0 5 10 15 20 25 30 35 40 Total Gate Charge : -Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RSD160P05 　 Data Sheet FIg.13 Typical Capacitance vs. Drain-Source Voltage 100000 Ta=25°C f=1MHz VGS=0V 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = -10V) 10000 PW = 100μs Capacitance : C [pF] 1000 Drain Current : -ID[ A ] 10 Ciss Coss PW = 1ms 1 PW = 10ms 100 Crss 10 Tc=25°C Single Pulse 1 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] 0.1 0.1 1 10 DC Operation 100 Drain-Source Voltage : -VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） TC=25°C Single Pulse 1 0.1 0.01 Rth(ch-c)=6.25°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RSD160P05  Measurement circuits 　 Data Sheet Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A