Data Sheet
Ultra Low Capacitance ESD Protection Diode
RSD6.8JS2
lApplications ESD Protection lDimensions (Unit : mm) lLand size figure (Unit : mm)
1.0 0.5 0.5
1.6±0.1 0.22±0.05 0 .13±0.05 (5) (4)
1.6±0.1
lFeatures 1)Ultra small mold type. (EMD6) 2)Ultra Low Capacitance 3)Bi direction 4)High reliability
(6)
0.3 0.25 0.15 0.15 0.25
1.2±0.1
0.45
0~0.1
0.4
EMD6
(1)
(2) 0.5
(3)
lConstruction Silicon epitaxial planer
0.5 1.0±0.1
lStructure
0.5±0.05
(6) (5) (4)
ROHM : EMD6 JEITA : SC-75A Size dot (year week factory)
(1) (2) (3)
*Please make 3 and 6 Pin open in circuit upon
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg
Limits 150 150 -55 to +150
Unit mW/Total C C
lElectrical characteristics (Ta=25C) Parameter Symbol VZ Zener voltage Reverse current Capacitance between terminals *Rating of per diode. IR Ct
Min. 6.0 -
Typ. 1
Max. 8.0 0.50 -
Unit V μA pF IZ=5mA
Conditions VR=3.5V f=1MHz,VR=0V
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1/3
2011.09 - Rev.A
1.55
RSB6.8JS2
Data Sheet
10
100000
10000 REVERSE CURRENT:IR (pA) ZENER CURRENT:Iz(mA) Ta=-25°C 1 Ta=125°C Ta=125°C 1000
Ta=75°C
Ta=25°C Ta=75°C 0.1
100
10
Ta=25°C
1
0.01 6.5 7 7.5 8 8.5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS
0.1 0 1 2 3 4 5 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
10 f=1MHz
8 7.95 7.9 ZENER VOLTAGE:Vz(V) 7.85 7.8 7.75 AVE:7.64V 7.7 7.65 7.6 7.55 Ta=25°C IZ=5mA n=30pcs
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
0.1 0 1 2 3 4 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
7.5 Vz DISPERSION MAP
5 CAPACITANCE BETWEENTERMINALS:Ct(pF) 4.5 REVERSE CURRENT:IR(pA) 4 3.5 3 2.5 2 1.5 1 0.5 0 IR DISPERSION MAP AVE:1.16pA Ta=25°C VR=3.5V n=30pcs
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Ct DISPERSION MAP AVE:1.4pF Ta=25°C f=1MHz VR=0V n=10pcs
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2/3
2011.09 - Rev.A
RSB6.8JS2
Data Sheet
1000
1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a)
DYNAMIC IMPEDANCE:Zz(Ω)
Rth(j-c)
100
100
10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10
10 0.001
0.01
0.1
1
10
100
1000
Time:t(s) Rth-t CHARACTERISTICS
30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV)
20
15 AVE:15.7kV 10
5
AVE:1.2kV
0 C=200pF R=0Ω
C=150pF R=330Ω ESD DISPERSION MAP
C=100pF R=1.5kΩ
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.09 - Rev.A
Notice
Notes
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