RSE002N06TL

2.5V Drive Nch MOSFET RSE002N06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) EMT3 or SOT-416 0.7 1.6 0.55 0.3 (2) 0.2 (1) 0.2 0.15 0.5 0.5 0.1Min. 0.8 e N co ew m m D es en ig de ns d f 1.6 (3) Features 1) High speed switing. 2) Small package(EMT3). 3) Low voltage drive(2.5V drive). 1.0 (1)Source (2)Gate Abbreviated symbol : RK (3)Drain  Application Switching  Packaging specifications  Inner circuit Package Type Code Basic ordering unit (pieces) RSE002N06 (3) Taping TL 3000  ∗2 (2) ∗1  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Unit VDSS 60 V VGSS 20 V ID 250 mA Pulsed Continuous IDP IS *1 1 125 A mA Pulsed ISP *1 1 A PD *2 R Source current (Body Diode) Limits Continuous Gate-source voltage Drain current Symbol Power dissipation 150 mW Tch Tstg 150 55 to +150 C C Symbol Limits Unit Rth (ch-a)* 833 C / W (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ot Channel temperature Range of storage temperature (1) Source (2) Gate (3) Drain *1 Pw10s, Duty cycle1% N *2 Each terminal mounted on a recommended land.  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.01 - Rev.A RSE002N06 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Min. Typ. Max. Unit Conditions - - 10 A VGS=20V, VDS=0V 60 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=60V, VGS=0V VGS (th) 1.0 - 2.3 V VDS=10V, ID=1mA - 1.7 2.4 - 2.1 3.0 - 2.3 3.2 ID=250mA, VGS=10V ID=250mA, VGS=4.5V Static drain-source on-state resistance * RDS (on) - 3.0 12.0 Forward transfer admittance l Yfs l* 0.25 - - S ID=250mA, VDS=10V Input capacitance Ciss - 15 - pF VDS=25V ID=250mA, VGS=4.0V or  e N co ew m m D es en ig de ns d f ID=10mA, VGS=2.5V Output capacitance Coss - 4.5 - pF VGS=0V Reverse transfer capacitance Crss - 2.0 - pF f=1MHz Turn-on delay time td(on) * - 3.5 - ns ID=100mA, VDD 30V tr * - 5 - ns VGS=10V td(off) * tf * - 18 28 - ns ns RL 300 RG=10 Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. * Forward voltage VSD 1.2 Unit V Conditions Is=250mA, VGS=0V N ot R *Pulsed Max. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 2/5 2010.01 - Rev.A RSE002N06 Data Sheet Electrical characteristic curves 0.4 VGS= 10V VGS= 4.5V VGS= 4.0V 0.3 0.2 VGS= 2.8V 0.4 0.3 VGS= 2.8V 0.2 0.1 0.1 Ta= 25C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] Ta= 25C Pulsed DRAIN CURRENT : ID[A] 1 0.5 0.5 VDS= 10V Pulsed 0.1 Ta=125C Ta=75C Ta=25C Ta= -25C 0.01 0.001 VGS= 2.5V 0.0001 0 0 0 0.2 0.4 0.6 0.8 0 1 DRAIN-SOURCE VOLTAGE : VDS[V] 6 8 0.5 1 1.5 2 2.5 0.1 0.001 0.01 0.1 1 100 VGS= 10V Pulsed Fig.3 Typical Transfer Characteristics Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 0.001 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( I ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( II ) 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( IV ) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 10 Ta=125C Ta=75C Ta=25C Ta= -25C 1 0.01 0.1 1 DRAIN-CURRENT : ID[A] 1 VGS= 2.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] R 1 VGS= 4.5V Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( III ) 100 Ta=125C Ta=75C Ta=25C Ta= -25C 100 0.1 0.001 1 DRAIN-CURRENT : ID[A] VGS= 4.0V Pulsed 3 GATE-SOURCE VOLTAGE : VGS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 1 10 0 10 Fig.2 Typical Output Characteristics( II ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 10 VGS= 2.5V VGS= 4.0V VGS= 4.5V VGS= 10V ot STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 4 e N co ew m m D es en ig de ns d f STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] Ta= 25C Pulsed 100 N 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( I ) 100 or VGS= 2.5V 1 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( IV ) 3/5 VDS= 10V Pulsed 0.1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.01 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.01 - Rev.A 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.01 0.001 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V SD [V] CAPACITANCE : C [pF] 100 Ta=25C f=1MHz VGS=0V 10 Crss 1000 Ta=25C Pulsed 6 ID= 0.01A 4 ID= 0.25A 2 0 td(off) tf Ta=25C VDD= 30V VGS=10V RG=10 Pulsed 100 10 tr td(on) 1 0 2.5 5 7.5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics e N co ew m m D es en ig de ns d f Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 8 or VGS=0V Pulsed SWITCHING TIME : t [ns] 1 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[] REVERSE DRAIN CURRENT : Is [A] RSE002N06 Ciss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS [V] N ot R Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 4/5 2010.01 - Rev.A RSE002N06 Data Sheet Measurement circuits Pulse width ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching waveforms e N co ew m m D es en ig de ns d f Fig.1-1 Switching time measurement circuit or VGS N ot R Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 5/5 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. or The content specified herein is subject to change for improvement without notice. e N co ew m m D es en ig de ns d f The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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