RSF010P05

Data Sheet 4V Drive Pch MOSFET RSF010P05  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TUMT3 0.2Max. Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(4V) Abbreviated symbol : SU  Application Switching  Packaging specifications Type Package Code Taping TL 3000   Inner circuit (3) Basic ordering unit (pieces) RSF010P05 ∗1 ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 45 20 1 *1 Unit V V A A A A W C C (1) Gate (2) Source (3) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 4 0.6 4 0.8 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 156 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A RSF010P05  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 45 1.0 1 Typ. 330 450 490 160 40 17 6 4 18 6 2.3 0.9 0.6 Max. 10 1 2.5 460 630 690 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=45V, VGS=0V VDS=10V, ID=1mA ID=1A, VGS=10V m ID=0.5A, VGS=4.5V ID=0.5A, VGS=4V ID=1A, VDS=10V VDS=10V VGS=0V f=1MHz ID=0.5A, VDD 25V VGS=10V RL=50 RG=10 ID=1A VDD 25V VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=1A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A RSF010P05 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics ( Ⅰ) 1 Ta=25°C Pulsed 0.8 VGS=-10.0V VGS=-4.5V Drain Current : -ID [A] VGS=-3.0V 0.6 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 1 VGS=-10.0V VGS=-4.5V 0.8 VGS=-4.0V VGS=-3.0V Ta=25°C Pulsed Drain Current : -ID [A] VGS=-4.0V 0.6 VGS=-2.8V 0.4 0.4 VGS=-2.8V 0.2 VGS=-2.5V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] 0.2 VGS=-2.5V 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 10000 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-4.0V VGS=-4.5V VGS=-10V 10000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS=-10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 1000 1000 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current :-ID [A] Drain Current :- ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=-4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 1000 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current :- ID [A] Drain Current :- ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A RSF010P05 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=-10V pulsed 10 Fig.8 Typical Transfer Characteristics VDS=-10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Forward Transfer Admittance Yfs [S] Drain Currnt : -ID [A] 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.001 0.001 0.01 0.1 Drain Current : -ID [A] 1 10 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-Source Voltage : -VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1500 Ta=25°C Pulsed ID=-0.5A ID=-1.0A Source Current : -Is [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1000 500 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : - VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics 1000 VDD≒-25V VGS=-10V RG=10Ω Ta=25°C Pulsed 10 Ta=25°C VDD=-25V ID=-1.0A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : -VGS [V] tf Switching Time : t [ns] 100 td(off) 6 4 10 td(on) 2 tr 1 0.01 0.1 1 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Total Gate Charge : Qg [nC] Drain Current :- ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A RSF010P05 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C f=1MHz VGS=0V 10 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = -10V) PW = 100μs 100 Drain Current : - ID [ A ] Capacitance : C [pF] Ciss 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Coss 10 Crss DC Operation 1 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 0.001 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=156°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.0001 0.00001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A RSF010P05  Measurement circuits 　 Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A