RSH065N06

4V Drive Nch MOSFET RSH065N06 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type RSH065N06 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 (1) (2) (3) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 60 VGSS 20 ±6.5 ID IDP ∗1 ±26 IS 1.6 26 ISP ∗1 PD ∗2 2.0 Tch 150 Tstg −55 to +150 Unit V V A A A A W °C °C (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Total power dissipatino Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-A) ∗ Limits 62.5 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A RSH065N06 Electrical characteristics (Ta=25C) Parameter Symbol Min. − 60 − 1.0 − − − 4 − − − − − − − − − − Typ. − − − − 24 28 31 − 900 200 100 13 25 60 20 11 2 4 Max. 10 − 1 2.5 37 44 48 − − − − − − − − 16 − − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=6.5A, VGS=10V ID=6.5A, VGS=4.5V ID=6.5A, VGS=4.0V ID=6.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.3A, VDD 30V VGS=10V RL=9.1Ω RG=10Ω ID=6.5A, VDD 30V VGS=5V RL=4.6Ω, RG=10Ω RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=1.6A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.12 - Rev.A RSH065N06 Electrical characteristic curves STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS=10V Pulsed Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=10V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=4.5V Pulsed DRAIN CURRENT : ID (A) 1 100 100 0.1 10 10 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 0.01 0.1 1 10 1 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current(Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=4V Pulsed 100 ID=6.5A ID=3.25A Ta=25°C Pulsed 10000 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C (pF) 100 1000 Ciss 50 Coss 100 10 Crss 10 0.01 1 0.01 0.1 1 10 0 0 5 10 15 0.1 1 10 100 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙΙ ) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Typical Capacitance vs. Drain-Source Voltage 10 10000 GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) SOURCE CURRENT : IS (A) 1000 tf td(off) Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed 10 Ta=25°C VDD=30V ID=6.5A RG=10Ω Pulsed VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 5 0.1 tr 10 td(on) 1 0.01 0.1 1 10 0 0.01 0.0 0 5 10 15 20 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Switching Characteristics Fig.8 Dynamic Input Characteristics Fig.9 Source Current vs. Source-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.12 - Rev.A RSH065N06 Measurement circuit Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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